Growth and properties of large-area sulfur-doped graphene films

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DOI

  • Jinhao Zhou, University of Electronic Science and Technology of China, Chengdu
  • ,
  • Zegao Wang, University of Electronic Science and Technology of China, Chengdu
  • ,
  • Yuanfu Chen, University of Electronic Science and Technology of China, Chengdu
  • ,
  • Jingbo Liu, Central Academy of Dongfang Electric Corporation
  • ,
  • Binjie Zheng, University of Electronic Science and Technology of China, Chengdu
  • ,
  • Wanli Zhan, University of Electronic Science and Technology of China, Chengdu
  • ,
  • Yanrong Li, University of Electronic Science and Technology of China, Chengdu

Heteroatom doping can effectively tune the structure and properties of graphene. Theoretical calculations indicate that sulfur doping can effectively modify the band structure and further modulate the carrier transport properties of graphene. However, it is still a big challenge to synthesize large-area sulfur-doped graphene (SG) films with a high sulfur doping concentration and reasonable electrical properties since sulfur has a much larger atomic radius than carbon. In this study, the solid organic source thianthrene (C12H8S2) is employed as both a carbon source and sulfur dopant to grow large-area, few-layered SG films via chemical vapor deposition (CVD). The results show that the doping concentration, doping configuration and electrical properties can be effectively tuned via the hydrogen flux. The sulfur doping concentration is as high as 4.01 at% and the maximal mobility of SG can reach up to 270 cm(2) V-1 s(-1), which are the highest ever reported for sulfur-doped graphene.

Original languageEnglish
JournalJournal of Materials Chemistry C
Volume5
Issue31
Pages (from-to)7944-7949
Number of pages6
ISSN2050-7526
DOIs
Publication statusPublished - 21 Aug 2017

    Research areas

  • OXYGEN REDUCTION REACTION, CHEMICAL-VAPOR-DEPOSITION, LOW-TEMPERATURE GROWTH, ELECTRICAL-PROPERTIES, RAMAN-SPECTROSCOPY, CARBON NANOTUBES, NITROGEN, ELECTROCATALYST, NANOSHEETS, MECHANISM

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