Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

  • Chitengfei Zhang, Wuhan University of Technology
  • ,
  • Rong Tu, Wuhan University of Technology
  • ,
  • Liu Liu, Wuhan University of Technology
  • ,
  • Jun Li, Institute of Fluid Physics
  • ,
  • Mingdong Dong
  • Zegao Wang
  • ,
  • Ji Shi, Tokyo Institute of Technology
  • ,
  • Haiwen Li, International Research Center for Hydrogen Energy, Kyushu University
  • ,
  • Hitoshi Ohmori, Institute of Physical and Chemical Research
  • ,
  • Song Zhang, Wuhan University of Technology
  • ,
  • Lianmeng Zhang, Wuhan University of Technology
  • ,
  • Takashi Goto, Wuhan University of Technology

The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.

Original languageEnglish
JournalCeramics International
Volume45
Issue18, Part A
Pages (from-to)24254-24259
Number of pages6
ISSN0272-8842
DOIs
Publication statusPublished - 2019

    Research areas

  • Carrier transport performance, Electrodeposited copper film, Field effect transistor, Single-crystalline monolayer graphene

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