Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

Chitengfei Zhang; Rong Tu; Liu Liu; Jun Li; Mingdong Dong; Zegao Wang; Ji Shi; Haiwen Li; Hitoshi Ohmori; Song Zhang; Lianmeng Zhang; Takashi Goto

doi:10.1016/j.ceramint.2019.08.137

Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

Chitengfei Zhang, Rong Tu, Liu Liu, Jun Li, Mingdong Dong, Zegao Wang, Ji Shi, Haiwen Li, Hitoshi Ohmori, Song Zhang^*, Lianmeng Zhang, Takashi Goto

^*Corresponding author for this work

Interdisciplinary Nanoscience Center - INANO-Fysik, iNANO-huset

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

4 Citations (Scopus)

Abstract

The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm⁻². The nucleation density of graphene increased from 124 to 192 mm⁻² with increasing current density from 0.03 to 0.07 A/cm⁻². Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μ_h = ~4041 cm²V⁻¹s⁻¹ and μ_e = ~2580 cm²V⁻¹s⁻¹ at room temperature.

Original language	English
Journal	Ceramics International
Volume	45
Issue	18, Part A
Pages (from-to)	24254-24259
Number of pages	6
ISSN	0272-8842
DOIs	https://doi.org/10.1016/j.ceramint.2019.08.137
Publication status	Published - 2019

Keywords

Carrier transport performance
Electrodeposited copper film
Field effect transistor
Single-crystalline monolayer graphene

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10.1016/j.ceramint.2019.08.137

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@article{d78126e1d9e54e2db3fd8a4492269daa,

title = "Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass",

abstract = "The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.",

keywords = "Carrier transport performance, Electrodeposited copper film, Field effect transistor, Single-crystalline monolayer graphene",

author = "Chitengfei Zhang and Rong Tu and Liu Liu and Jun Li and Mingdong Dong and Zegao Wang and Ji Shi and Haiwen Li and Hitoshi Ohmori and Song Zhang and Lianmeng Zhang and Takashi Goto",

year = "2019",

doi = "10.1016/j.ceramint.2019.08.137",

language = "English",

volume = "45",

pages = "24254--24259",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "18, Part A",

}

Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass. / Zhang, Chitengfei; Tu, Rong; Liu, Liu et al.
In: Ceramics International, Vol. 45, No. 18, Part A, 2019, p. 24254-24259.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

TY - JOUR

T1 - Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

AU - Zhang, Chitengfei

AU - Tu, Rong

AU - Liu, Liu

AU - Li, Jun

AU - Dong, Mingdong

AU - Wang, Zegao

AU - Shi, Ji

AU - Li, Haiwen

AU - Ohmori, Hitoshi

AU - Zhang, Song

AU - Zhang, Lianmeng

AU - Goto, Takashi

PY - 2019

Y1 - 2019

N2 - The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.

AB - The synthesis of single crystal graphene domains on cold rolling Cu foil has recently been reported. However, the cold rolling Cu foils have many rolling lines that increase the roughness of the foil. In this work, we developed an electrodeposited method to achieve high-quality Cu film on which the nucleation density of graphene decreased greatly. The Cu film was electrodeposited over chemical plated silver film on quartz glass. The roughness and thickness of the Cu film were positively correlated with the deposition temperature and current density, respectively. High-quality single crystal graphene with low nucleation density was achieved on electrodeposited Cu film. With increasing deposition temperature of Cu film from 20 to 65 °C, the nucleation density of graphene increased from 124 to 448 mm−2. The nucleation density of graphene increased from 124 to 192 mm−2 with increasing current density from 0.03 to 0.07 A/cm−2. Finally, a back-gated graphene field effect transistor (FET) was fabricated with a carrier transport performance of μh = ~4041 cm2V−1s−1 and μe = ~2580 cm2V−1s−1 at room temperature.

KW - Carrier transport performance

KW - Electrodeposited copper film

KW - Field effect transistor

KW - Single-crystalline monolayer graphene

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U2 - 10.1016/j.ceramint.2019.08.137

DO - 10.1016/j.ceramint.2019.08.137

M3 - Journal article

AN - SCOPUS:85070691935

SN - 0272-8842

VL - 45

SP - 24254

EP - 24259

JO - Ceramics International

JF - Ceramics International

IS - 18, Part A

ER -

Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

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