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Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

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Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation. / Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted; Julsgaard, Brian.

In: Physica Status Solidi. A: Applications and Materials Science , Vol. 215, No. 9, 1700516 , 09.05.2018.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

Harvard

Boturchuk, I, Scheffler, LJ, Larsen, AN & Julsgaard, B 2018, 'Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation', Physica Status Solidi. A: Applications and Materials Science , vol. 215, no. 9, 1700516 . https://doi.org/10.1002/pssa.201700516

APA

Boturchuk, I., Scheffler, L. J., Larsen, A. N., & Julsgaard, B. (2018). Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation. Physica Status Solidi. A: Applications and Materials Science , 215(9), [1700516 ]. https://doi.org/10.1002/pssa.201700516

CBE

Boturchuk I, Scheffler LJ, Larsen AN, Julsgaard B. 2018. Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation. Physica Status Solidi. A: Applications and Materials Science . 215(9):Article 1700516 . https://doi.org/10.1002/pssa.201700516

MLA

Boturchuk, Ievgen et al. "Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation". Physica Status Solidi. A: Applications and Materials Science . 2018. 215(9). https://doi.org/10.1002/pssa.201700516

Vancouver

Boturchuk I, Scheffler LJ, Larsen AN, Julsgaard B. Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation. Physica Status Solidi. A: Applications and Materials Science . 2018 May 9;215(9). 1700516 . https://doi.org/10.1002/pssa.201700516

Author

Boturchuk, Ievgen ; Scheffler, Leopold Julian ; Larsen, Arne Nylandsted ; Julsgaard, Brian. / Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation. In: Physica Status Solidi. A: Applications and Materials Science . 2018 ; Vol. 215, No. 9.

Bibtex

@article{b703dc230f1b4328b99cfbc3f7a2c7af,
title = "Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation",
abstract = "Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects are studied by the means of deep level transient spectroscopy (DLTS). Changes in carrier capture kinetics are monitored with varying filling pulse duration.",
keywords = "deep level transient spectroscopy, electron traps, GaN, n-type semiconductor, ohmic contacts, heat treatment",
author = "Ievgen Boturchuk and Scheffler, {Leopold Julian} and Larsen, {Arne Nylandsted} and Brian Julsgaard",
year = "2018",
month = may,
day = "9",
doi = "10.1002/pssa.201700516",
language = "English",
volume = "215",
journal = "Physica Status Solidi. A: Applications and Materials Science (Online)",
issn = "1862-6319",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "9",

}

RIS

TY - JOUR

T1 - Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

AU - Boturchuk, Ievgen

AU - Scheffler, Leopold Julian

AU - Larsen, Arne Nylandsted

AU - Julsgaard, Brian

PY - 2018/5/9

Y1 - 2018/5/9

N2 - Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects are studied by the means of deep level transient spectroscopy (DLTS). Changes in carrier capture kinetics are monitored with varying filling pulse duration.

AB - Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects are studied by the means of deep level transient spectroscopy (DLTS). Changes in carrier capture kinetics are monitored with varying filling pulse duration.

KW - deep level transient spectroscopy

KW - electron traps

KW - GaN

KW - n-type semiconductor

KW - ohmic contacts

KW - heat treatment

U2 - 10.1002/pssa.201700516

DO - 10.1002/pssa.201700516

M3 - Journal article

VL - 215

JO - Physica Status Solidi. A: Applications and Materials Science (Online)

JF - Physica Status Solidi. A: Applications and Materials Science (Online)

SN - 1862-6319

IS - 9

M1 - 1700516

ER -