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Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

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Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects are studied by the means of deep level transient spectroscopy (DLTS). Changes in carrier capture kinetics are monitored with varying filling pulse duration.
Original languageEnglish
Article number1700516
JournalPhysica Status Solidi. A: Applications and Materials Science
Number of pages6
Publication statusPublished - 9 May 2018

    Research areas

  • deep level transient spectroscopy, electron traps, GaN, n-type semiconductor, ohmic contacts, heat treatment

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