Er sensitization by a thin Si layer: Interaction-distance dependence

Brian Julsgaard; Ying-Wei Lu; Rasmus Vincentz Skougaard Jensen; Thomas Garm Pedersen; K. Pedersen; Jacques Chevallier; Peter Balling; Arne Nylandsted Larsen

doi:10.1103/PhysRevB.84.085403

Er sensitization by a thin Si layer: Interaction-distance dependence

Brian Julsgaard, Ying-Wei Lu, Rasmus Vincentz Skougaard Jensen, Thomas Garm Pedersen, K. Pedersen, Jacques Chevallier, Peter Balling, Arne Nylandsted Larsen

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

6 Citations (Scopus)

Abstract

From photoluminescence measurements on sensitized erbium in a-Si/SiO2:Er/SiO2 multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be 0.22±0.02 nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium ⁴I_13/2→ ⁴I_15/2 transition may lead to an exaggerated estimate of the interaction distance.

Original language	English
Journal	Physical Review B
Volume	84
Issue	8
Pages (from-to)	085403
Number of pages	7
ISSN	2469-9950
DOIs	https://doi.org/10.1103/PhysRevB.84.085403
Publication status	Published - 2011

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10.1103/PhysRevB.84.085403

Cite this

@article{43174ef1125d45468328eed7196357bb,

title = "Er sensitization by a thin Si layer: Interaction-distance dependence",

abstract = "From photoluminescence measurements on sensitized erbium in a-Si/SiO2:Er/SiO2 multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be 0.22±0.02 nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium 4I13/2→ 4I15/2 transition may lead to an exaggerated estimate of the interaction distance.",

author = "Brian Julsgaard and Ying-Wei Lu and Jensen, {Rasmus Vincentz Skougaard} and Pedersen, {Thomas Garm} and K. Pedersen and Jacques Chevallier and Peter Balling and {Nylandsted Larsen}, Arne",

year = "2011",

doi = "10.1103/PhysRevB.84.085403",

language = "English",

volume = "84",

pages = "085403",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "8",

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TY - JOUR

T1 - Er sensitization by a thin Si layer: Interaction-distance dependence

AU - Julsgaard, Brian

AU - Lu, Ying-Wei

AU - Jensen, Rasmus Vincentz Skougaard

AU - Pedersen, Thomas Garm

AU - Pedersen, K.

AU - Chevallier, Jacques

AU - Balling, Peter

AU - Nylandsted Larsen, Arne

PY - 2011

Y1 - 2011

N2 - From photoluminescence measurements on sensitized erbium in a-Si/SiO2:Er/SiO2 multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be 0.22±0.02 nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium 4I13/2→ 4I15/2 transition may lead to an exaggerated estimate of the interaction distance.

AB - From photoluminescence measurements on sensitized erbium in a-Si/SiO2:Er/SiO2 multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be 0.22±0.02 nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium 4I13/2→ 4I15/2 transition may lead to an exaggerated estimate of the interaction distance.

U2 - 10.1103/PhysRevB.84.085403

DO - 10.1103/PhysRevB.84.085403

M3 - Journal article

SN - 2469-9950

VL - 84

SP - 085403

JO - Physical Review B

JF - Physical Review B

IS - 8

ER -