TY - JOUR
T1 - Enhanced Thermoelectric Performance through Tuning Bonding Energy in Cu2Se1-xSx Liquid-like Materials
AU - Zhao, Kunpeng
AU - Blichfeld, Anders Bank
AU - Chen, Hongyi
AU - Song, Qingfeng
AU - Zhang, Tiansong
AU - Zhu, Chenxi
AU - Ren, Dudi
AU - Hanus, Riley
AU - Qiu, Pengfei
AU - Iversen, Bo B.
AU - Xu, Fangfang
AU - Snyder, G. Jeffrey
AU - Shi, Xun
AU - Chen, Lidong
PY - 2017
Y1 - 2017
N2 - Thermoelectric materials require an optimal carrier concentration to maximize electrical transport and thus thermoelectric performance. Element doping and composition off-stoichiometry are the two general and effective approaches for optimizing carrier concentrations, which have been successfully applied in almost all semiconductors. In this study, we propose a new strategy called bonding energy variation to tune the carrier concentrations in Cu2Se-based liquid-like thermoelectric compounds. By utilizing the different bond features in Cu2Se and Cu2S, alloying S at the Se sites successfully increases the bonding energy to fix Cu atoms in the crystal lattice to suppress the formation of Cu vacancies, leading to greatly reduced carrier concentrations toward the optimal value. Via a combination of the lowered electrical and lattice thermal conductivities and the relatively good carrier mobility caused by the weak alloy scattering potential, ultrahigh zT values are achieved in slightly S-doped Cu2Se with a maximal value of 2.0 at 1000 K, 30% higher than that in nominally stoichiometric Cu2Se.
AB - Thermoelectric materials require an optimal carrier concentration to maximize electrical transport and thus thermoelectric performance. Element doping and composition off-stoichiometry are the two general and effective approaches for optimizing carrier concentrations, which have been successfully applied in almost all semiconductors. In this study, we propose a new strategy called bonding energy variation to tune the carrier concentrations in Cu2Se-based liquid-like thermoelectric compounds. By utilizing the different bond features in Cu2Se and Cu2S, alloying S at the Se sites successfully increases the bonding energy to fix Cu atoms in the crystal lattice to suppress the formation of Cu vacancies, leading to greatly reduced carrier concentrations toward the optimal value. Via a combination of the lowered electrical and lattice thermal conductivities and the relatively good carrier mobility caused by the weak alloy scattering potential, ultrahigh zT values are achieved in slightly S-doped Cu2Se with a maximal value of 2.0 at 1000 K, 30% higher than that in nominally stoichiometric Cu2Se.
UR - http://www.scopus.com/inward/record.url?scp=85027318421&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.7b01687
DO - 10.1021/acs.chemmater.7b01687
M3 - Journal article
AN - SCOPUS:85027318421
SN - 0897-4756
VL - 29
SP - 6367
EP - 6377
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 15
ER -