Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

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Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit. / Duvjir, Ganbat; Choi, Byoung Ki; Jang, Iksu; Ulstrup, Soren; Kang, Soonmin; Trinh Thi Ly; Kim, Sanghwa; Choi, Young Hwan; Jozwiak, Chris; Bostwick, Aaron; Rotenberg, Eli; Park, Je-Geun; Sankar, Raman; Kim, Ki-Seok; Kim, Jungdae; Chang, Young Jun.

In: Nano Letters, Vol. 18, No. 9, 09.2018, p. 5432-5438.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Duvjir, G, Choi, BK, Jang, I, Ulstrup, S, Kang, S, Trinh Thi Ly, Kim, S, Choi, YH, Jozwiak, C, Bostwick, A, Rotenberg, E, Park, J-G, Sankar, R, Kim, K-S, Kim, J & Chang, YJ 2018, 'Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit', Nano Letters, vol. 18, no. 9, pp. 5432-5438. https://doi.org/10.1021/acs.nanolett.8b01764

APA

Duvjir, G., Choi, B. K., Jang, I., Ulstrup, S., Kang, S., Trinh Thi Ly, ... Chang, Y. J. (2018). Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit. Nano Letters, 18(9), 5432-5438. https://doi.org/10.1021/acs.nanolett.8b01764

CBE

Duvjir G, Choi BK, Jang I, Ulstrup S, Kang S, Trinh Thi Ly, Kim S, Choi YH, Jozwiak C, Bostwick A, Rotenberg E, Park J-G, Sankar R, Kim K-S, Kim J, Chang YJ. 2018. Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit. Nano Letters. 18(9):5432-5438. https://doi.org/10.1021/acs.nanolett.8b01764

MLA

Vancouver

Author

Duvjir, Ganbat ; Choi, Byoung Ki ; Jang, Iksu ; Ulstrup, Soren ; Kang, Soonmin ; Trinh Thi Ly ; Kim, Sanghwa ; Choi, Young Hwan ; Jozwiak, Chris ; Bostwick, Aaron ; Rotenberg, Eli ; Park, Je-Geun ; Sankar, Raman ; Kim, Ki-Seok ; Kim, Jungdae ; Chang, Young Jun. / Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit. In: Nano Letters. 2018 ; Vol. 18, No. 9. pp. 5432-5438.

Bibtex

@article{7f3af90a0dc04fb8876611002fe3d7a5,
title = "Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit",
abstract = "Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.",
keywords = "Charge-density wave, vanadium diselenide, metal insulator transition, transition-metal dichalcogenides, two-dimensional materials, ITINERANT-ELECTRON FERROMAGNETISM, MAGNETIC-PROPERTIES, SPIN FLUCTUATIONS",
author = "Ganbat Duvjir and Choi, {Byoung Ki} and Iksu Jang and Soren Ulstrup and Soonmin Kang and {Trinh Thi Ly} and Sanghwa Kim and Choi, {Young Hwan} and Chris Jozwiak and Aaron Bostwick and Eli Rotenberg and Je-Geun Park and Raman Sankar and Ki-Seok Kim and Jungdae Kim and Chang, {Young Jun}",
year = "2018",
month = "9",
doi = "10.1021/acs.nanolett.8b01764",
language = "English",
volume = "18",
pages = "5432--5438",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "AMER CHEMICAL SOC",
number = "9",

}

RIS

TY - JOUR

T1 - Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

AU - Duvjir, Ganbat

AU - Choi, Byoung Ki

AU - Jang, Iksu

AU - Ulstrup, Soren

AU - Kang, Soonmin

AU - Trinh Thi Ly, null

AU - Kim, Sanghwa

AU - Choi, Young Hwan

AU - Jozwiak, Chris

AU - Bostwick, Aaron

AU - Rotenberg, Eli

AU - Park, Je-Geun

AU - Sankar, Raman

AU - Kim, Ki-Seok

AU - Kim, Jungdae

AU - Chang, Young Jun

PY - 2018/9

Y1 - 2018/9

N2 - Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.

AB - Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.

KW - Charge-density wave

KW - vanadium diselenide

KW - metal insulator transition

KW - transition-metal dichalcogenides

KW - two-dimensional materials

KW - ITINERANT-ELECTRON FERROMAGNETISM

KW - MAGNETIC-PROPERTIES

KW - SPIN FLUCTUATIONS

U2 - 10.1021/acs.nanolett.8b01764

DO - 10.1021/acs.nanolett.8b01764

M3 - Journal article

VL - 18

SP - 5432

EP - 5438

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 9

ER -