Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

  • Ganbat Duvjir, Univ Ulsan, University of Ulsan, EHSRC
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  • Byoung Ki Choi, Seoul Natl Univ, Seoul National University, Dept Phys & Astron, Ctr Theoret Phys
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  • Iksu Jang, Pohang Univ Sci & Technol POSTECH, Pohang University of Science & Technology (POSTECH), Dept Phys
  • ,
  • Soren Ulstrup
  • Soonmin Kang, Seoul Natl Univ, Seoul National University, Dept Phys & Astron, Astron Program
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  • Trinh Thi Ly, Univ Ulsan, University of Ulsan, EHSRC
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  • Sanghwa Kim, Univ Ulsan, University of Ulsan, EHSRC
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  • Young Hwan Choi, Seoul Natl Univ, Seoul National University, Dept Phys & Astron, Ctr Theoret Phys
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  • Chris Jozwiak, EO Lawrence Berkeley Natl Lab, United States Department of Energy (DOE), Lawrence Berkeley National Laboratory, ALS
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  • Aaron Bostwick, EO Lawrence Berkeley Natl Lab, United States Department of Energy (DOE), Lawrence Berkeley National Laboratory, ALS
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  • Eli Rotenberg, EO Lawrence Berkeley Natl Lab, United States Department of Energy (DOE), Lawrence Berkeley National Laboratory, ALS
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  • Je-Geun Park, Seoul Natl Univ, Seoul National University, Dept Phys & Astron, Astron Program
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  • Raman Sankar, Natl Taiwan Univ, National Taiwan University, Ctr Condensed Matter Sci
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  • Ki-Seok Kim, Pohang Univ Sci & Technol POSTECH, Pohang University of Science & Technology (POSTECH), Dept Phys
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  • Jungdae Kim, Univ Ulsan, University of Ulsan, EHSRC
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  • Young Jun Chang, Seoul Natl Univ, Seoul National University, Dept Phys & Astron, Ctr Theoret Phys

Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.

Original languageEnglish
JournalNano Letters
Volume18
Issue9
Pages (from-to)5432-5438
Number of pages7
ISSN1530-6984
DOIs
Publication statusPublished - Sep 2018

    Research areas

  • Charge-density wave, vanadium diselenide, metal insulator transition, transition-metal dichalcogenides, two-dimensional materials, ITINERANT-ELECTRON FERROMAGNETISM, MAGNETIC-PROPERTIES, SPIN FLUCTUATIONS

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