Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Fabian Arnold; Jonas Warmuth; Matteo Michiardi; Jan Fikacek; Marco Bianchi; Jin Hu; Zhiqiang Mao; Jill Miwa; Udai Raj Singh; Martin Bremholm; Roland Wiesendanger; Jan Honolka; Tim Wehling; Jens Wiebe; Philip Hofmann

doi:10.1088/1361-648X/aaa43e

Electronic structure of Fe_1.08Te bulk crystals and epitaxial FeTe thin films on Bi₂Te₃

Fabian Arnold, Jonas Warmuth, Matteo Michiardi, Jan Fikacek, Marco Bianchi, Jin Hu, Zhiqiang Mao, Jill Miwa, Udai Raj Singh, Martin Bremholm, Roland Wiesendanger, Jan Honolka, Tim Wehling, Jens Wiebe, Philip Hofmann^*

^*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

9 Citations (Scopus)

Abstract

The electronic structure of thin films of FeTe grown on Bi ₂Te ₃ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe _1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi ₂Te ₃ in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Original language	English
Article number	065502
Journal	Journal of Physics: Condensed Matter
Volume	30
Issue	6
Number of pages	10
ISSN	0953-8984
DOIs	https://doi.org/10.1088/1361-648X/aaa43e
Publication status	Published - 12 Jan 2018

Keywords

FeTe
ARPES
STM
HIGH-TEMPERATURE SUPERCONDUCTIVITY
AUGMENTED-WAVE METHOD
ULTRASOFT PSEUDOPOTENTIALS
FESE FILMS
SRTIO3

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10.1088/1361-648X/aaa43e

https://arxiv.org/pdf/1711.07039.pdf

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Arnold, F., Warmuth, J., Michiardi, M., Fikacek, J., Bianchi, M., Hu, J., Mao, Z., Miwa, J., Singh, U. R., Bremholm, M., Wiesendanger, R., Honolka, J., Wehling, T., Wiebe, J., & Hofmann, P. (2018). Electronic structure of Fe_1.08Te bulk crystals and epitaxial FeTe thin films on Bi₂Te₃. Journal of Physics: Condensed Matter, 30(6), Article 065502. https://doi.org/10.1088/1361-648X/aaa43e

@article{5252e561c2364022be822562b0a1f03d,

title = "Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3",

abstract = "The electronic structure of thin films of FeTe grown on Bi 2Te 3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe 1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi 2Te 3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.",

keywords = "FeTe, ARPES, STM, HIGH-TEMPERATURE SUPERCONDUCTIVITY, AUGMENTED-WAVE METHOD, ULTRASOFT PSEUDOPOTENTIALS, FESE FILMS, SRTIO3",

author = "Fabian Arnold and Jonas Warmuth and Matteo Michiardi and Jan Fikacek and Marco Bianchi and Jin Hu and Zhiqiang Mao and Jill Miwa and Singh, {Udai Raj} and Martin Bremholm and Roland Wiesendanger and Jan Honolka and Tim Wehling and Jens Wiebe and Philip Hofmann",

year = "2018",

month = jan,

day = "12",

doi = "10.1088/1361-648X/aaa43e",

language = "English",

volume = "30",

journal = "Journal of Physics: Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd.",

number = "6",

}

Arnold, F, Warmuth, J, Michiardi, M, Fikacek, J, Bianchi, M, Hu, J, Mao, Z, Miwa, J, Singh, UR, Bremholm, M, Wiesendanger, R, Honolka, J, Wehling, T, Wiebe, J & Hofmann, P 2018, 'Electronic structure of Fe_1.08Te bulk crystals and epitaxial FeTe thin films on Bi₂Te₃', Journal of Physics: Condensed Matter, vol. 30, no. 6, 065502. https://doi.org/10.1088/1361-648X/aaa43e

Electronic structure of Fe_1.08Te bulk crystals and epitaxial FeTe thin films on Bi₂Te₃. / Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo et al.
In: Journal of Physics: Condensed Matter, Vol. 30, No. 6, 065502, 12.01.2018.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

TY - JOUR

T1 - Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

AU - Arnold, Fabian

AU - Warmuth, Jonas

AU - Michiardi, Matteo

AU - Fikacek, Jan

AU - Bianchi, Marco

AU - Hu, Jin

AU - Mao, Zhiqiang

AU - Miwa, Jill

AU - Singh, Udai Raj

AU - Bremholm, Martin

AU - Wiesendanger, Roland

AU - Honolka, Jan

AU - Wehling, Tim

AU - Wiebe, Jens

AU - Hofmann, Philip

PY - 2018/1/12

Y1 - 2018/1/12

N2 - The electronic structure of thin films of FeTe grown on Bi 2Te 3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe 1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi 2Te 3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

AB - The electronic structure of thin films of FeTe grown on Bi 2Te 3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe 1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi 2Te 3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

KW - FeTe

KW - ARPES

KW - STM

KW - HIGH-TEMPERATURE SUPERCONDUCTIVITY

KW - AUGMENTED-WAVE METHOD

KW - ULTRASOFT PSEUDOPOTENTIALS

KW - FESE FILMS

KW - SRTIO3

UR - http://www.scopus.com/inward/record.url?scp=85040912099&partnerID=8YFLogxK

U2 - 10.1088/1361-648X/aaa43e

DO - 10.1088/1361-648X/aaa43e

M3 - Journal article

SN - 0953-8984

VL - 30

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 6

M1 - 065502

ER -

Electronic structure of Fe_1.08Te bulk crystals and epitaxial FeTe thin films on Bi₂Te₃

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