Abstract
Sc12Co41.8Si30.2 was prepared from the elements by arc melting under argon and subsequent tempering at 800 °C for 350 h. Single-crystal X-ray diffraction reveals Sc12Co41.8Si30.2 to crystallize in a new hexagonal structure type: Pearson's symbol (PS) hP168, space group P6/mmm, a = 17.291(1), c = 8.0293(8) Å. The crystal structure is formed of three types of atomic layers along the [001] direction – two flat at z = 0 and z = 0.5 and one corrugated at z = 0.16–0.33 and z = 0.67–0.84, shows a substantial degree of positional and occupational disorder and close structural relationships to a series of hexagonal structures with PS hP164–hP171. Quantum chemical calculations have been performed to analyze the electronic structure and provide deeper insight into the structure-property relationships. The quantum chemical calculation indicates that the material features both two-center, two-electron localized bonding and multi-center multi-electron delocalized bonding.
Original language | English |
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Article number | 122373 |
Journal | Journal of Solid State Chemistry |
Volume | 302 |
Number of pages | 11 |
ISSN | 0022-4596 |
DOIs | |
Publication status | Published - Oct 2021 |
Externally published | Yes |
Keywords
- Crystal structure
- Electronic structure
- Scandium
- Silicides