Crystal and electronic structures of the new ternary silicide Sc12Co41.8Si30.2

B. Kotur, V. Babizhetskyy*, V. Smetana, C. Zheng, A. V. Mudring*

*Corresponding author for this work

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

3 Citations (Scopus)

Abstract

Sc12Co41.8Si30.2 was prepared from the elements by arc melting under argon and subsequent tempering at 800 ​°C for 350 ​h. Single-crystal X-ray diffraction reveals Sc12Co41.8Si30.2 to crystallize in a new hexagonal structure type: Pearson's symbol (PS) hP168, space group P6/mmm, a ​= ​17.291(1), c ​= ​8.0293(8) Å. The crystal structure is formed of three types of atomic layers along the [001] direction – two flat at z ​= ​0 and z ​= ​0.5 and one corrugated at z ​= ​0.16–0.33 and z ​= ​0.67–0.84, shows a substantial degree of positional and occupational disorder and close structural relationships to a series of hexagonal structures with PS hP164–hP171. Quantum chemical calculations have been performed to analyze the electronic structure and provide deeper insight into the structure-property relationships. The quantum chemical calculation indicates that the material features both two-center, two-electron localized bonding and multi-center multi-electron delocalized bonding.

Original languageEnglish
Article number122373
JournalJournal of Solid State Chemistry
Volume302
Number of pages11
ISSN0022-4596
DOIs
Publication statusPublished - Oct 2021
Externally publishedYes

Keywords

  • Crystal structure
  • Electronic structure
  • Scandium
  • Silicides

Fingerprint

Dive into the research topics of 'Crystal and electronic structures of the new ternary silicide Sc12Co41.8Si30.2'. Together they form a unique fingerprint.

Cite this