Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

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Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application. / Yang, Xiaonian; Li, Qiang; Hu, Guofeng; Wang, Zegao; Yang, Zhenyu; Liu, Xingqiang; Dong, Mingdong; Pan, Caofeng.

In: Science china-Materials, Vol. 59, No. 3, 03.2016, p. 182-190.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Yang, X, Li, Q, Hu, G, Wang, Z, Yang, Z, Liu, X, Dong, M & Pan, C 2016, 'Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application', Science china-Materials, vol. 59, no. 3, pp. 182-190. https://doi.org/10.1007/s40843-016-0130-1

APA

Yang, X., Li, Q., Hu, G., Wang, Z., Yang, Z., Liu, X., ... Pan, C. (2016). Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application. Science china-Materials, 59(3), 182-190. https://doi.org/10.1007/s40843-016-0130-1

CBE

MLA

Vancouver

Yang X, Li Q, Hu G, Wang Z, Yang Z, Liu X et al. Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application. Science china-Materials. 2016 Mar;59(3):182-190. https://doi.org/10.1007/s40843-016-0130-1

Author

Yang, Xiaonian ; Li, Qiang ; Hu, Guofeng ; Wang, Zegao ; Yang, Zhenyu ; Liu, Xingqiang ; Dong, Mingdong ; Pan, Caofeng. / Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application. In: Science china-Materials. 2016 ; Vol. 59, No. 3. pp. 182-190.

Bibtex

@article{0bdc54045eb04efe81492faa794d9062,
title = "Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application",
abstract = "Two-dimensional layered materials have attracted significant interest for their potential applications in electronic and optoelectronics devices. Among them, transition metal dichalcogenides (TMDs), especially molybdenum disulfide (MoS2), is extensively studied because of its unique properties. Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 mu m were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm(2) V-1 s(-1), indicating excellent electronic property comparing with previously reported CVD grown MoS2 monolayer. The MoS2 FETs also show a high photoresponsivity of 7 A W-1, as well as a fast photo-response time of 20 ms. The improved synthesis method recommended here, which makes material preparation much easier, may strongly promote further research and potential applications.",
keywords = "controlled synthesis method, high-quality MoS2 monolayer, growth parameters, photoresponse properties, CHEMICAL-VAPOR-DEPOSITION, SINGLE-LAYER MOS2, ATOMIC LAYERS, MOLYBDENUM-DISULFIDE, TRANSPORT-PROPERTIES, PHASE GROWTH, TRANSISTORS, PERFORMANCE, SIO2",
author = "Xiaonian Yang and Qiang Li and Guofeng Hu and Zegao Wang and Zhenyu Yang and Xingqiang Liu and Mingdong Dong and Caofeng Pan",
year = "2016",
month = "3",
doi = "10.1007/s40843-016-0130-1",
language = "English",
volume = "59",
pages = "182--190",
journal = "Science china-Materials",
issn = "2095-8226",
publisher = "Science Press",
number = "3",

}

RIS

TY - JOUR

T1 - Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

AU - Yang, Xiaonian

AU - Li, Qiang

AU - Hu, Guofeng

AU - Wang, Zegao

AU - Yang, Zhenyu

AU - Liu, Xingqiang

AU - Dong, Mingdong

AU - Pan, Caofeng

PY - 2016/3

Y1 - 2016/3

N2 - Two-dimensional layered materials have attracted significant interest for their potential applications in electronic and optoelectronics devices. Among them, transition metal dichalcogenides (TMDs), especially molybdenum disulfide (MoS2), is extensively studied because of its unique properties. Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 mu m were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm(2) V-1 s(-1), indicating excellent electronic property comparing with previously reported CVD grown MoS2 monolayer. The MoS2 FETs also show a high photoresponsivity of 7 A W-1, as well as a fast photo-response time of 20 ms. The improved synthesis method recommended here, which makes material preparation much easier, may strongly promote further research and potential applications.

AB - Two-dimensional layered materials have attracted significant interest for their potential applications in electronic and optoelectronics devices. Among them, transition metal dichalcogenides (TMDs), especially molybdenum disulfide (MoS2), is extensively studied because of its unique properties. Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 mu m were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm(2) V-1 s(-1), indicating excellent electronic property comparing with previously reported CVD grown MoS2 monolayer. The MoS2 FETs also show a high photoresponsivity of 7 A W-1, as well as a fast photo-response time of 20 ms. The improved synthesis method recommended here, which makes material preparation much easier, may strongly promote further research and potential applications.

KW - controlled synthesis method

KW - high-quality MoS2 monolayer

KW - growth parameters

KW - photoresponse properties

KW - CHEMICAL-VAPOR-DEPOSITION

KW - SINGLE-LAYER MOS2

KW - ATOMIC LAYERS

KW - MOLYBDENUM-DISULFIDE

KW - TRANSPORT-PROPERTIES

KW - PHASE GROWTH

KW - TRANSISTORS

KW - PERFORMANCE

KW - SIO2

U2 - 10.1007/s40843-016-0130-1

DO - 10.1007/s40843-016-0130-1

M3 - Journal article

VL - 59

SP - 182

EP - 190

JO - Science china-Materials

JF - Science china-Materials

SN - 2095-8226

IS - 3

ER -