Spin-Hall-effect nano-oscillators are promising beyond the CMOS devices currently available, and can potentially be used to emulate the functioning of neurons in computational neuromorphic systems. As they oscillate in the 4–20 GHz range, they could potentially be used for building highly accelerated neural hardware platforms. However, due to their extremely low signal level and high impedance at their output, as well as their microwave-range operating frequency, discerning whether the SHNO is oscillating or not carries a great challenge when its state read-out circuit is implemented using CMOS technologies. This paper presents the first CMOS front-end read-out circuitry, implemented in 180 nm, working at a SHNO oscillation frequency up to 4.7 GHz, managing to discern SHNO amplitudes of 100 µV even for an impedance as large as 300 Ω and a noise figure of 5.3 dB300 Ω. A design flow of this front end is presented, as well as the architecture of each of its blocks. The study of the low-noise amplifier is deepened for its intrinsic difficulties in the design, satisfying the characteristics of SHNOs.
- spin-hall oscillators