Centimeter-sized 2D alpha-MoO3 single crystal: growth, Raman anisotropy, and optoelectronic properties

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Centimeter-sized 2D alpha-MoO3 single crystal : growth, Raman anisotropy, and optoelectronic properties. / Zheng, Binjie; Wang, Zegao; Chen, Yuanfu; Zhang, Wanli; Li, Xuesong.

In: 2D materials, Vol. 5, No. 4, 045011, 25.07.2018.

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Zheng, Binjie ; Wang, Zegao ; Chen, Yuanfu ; Zhang, Wanli ; Li, Xuesong. / Centimeter-sized 2D alpha-MoO3 single crystal : growth, Raman anisotropy, and optoelectronic properties. In: 2D materials. 2018 ; Vol. 5, No. 4.

Bibtex

@article{d2f6cede347b4f7e88590ec9f74e7c4a,
title = "Centimeter-sized 2D alpha-MoO3 single crystal: growth, Raman anisotropy, and optoelectronic properties",
abstract = "Centimeter-sized 2D layered alpha-MoO3 single crystal has been grown by a facile physical vapor deposition method. The lateral size of alpha-MoO3 single crystals can be tunable from micrometer to centimeter by controlling the inner diameter of the quartz tube reaction chamber. The as-grown alpha-MoO3 exhibits strong in-plane Raman anisotropy, where A(g) Raman modes give the direction of crystallographic orientation, which can be used to rapidly and precisely identify the crystallinity of large-area alpha-MoO3 through selected-area angel-resolved polarized Raman spectroscopy. Moreover, the photodetectors based on annealed alpha-MoO3 single crystals exhibit excellent optoelectronic performance with a photoresponsivity of 65.6 A W-1 and a fast photoresponse time of 2 s.",
keywords = "two-dimensional semiconductor, physical vapor deposition, molybdenum trioxide, Raman anisotropy, photoresponse, BLACK PHOSPHORUS, MOLYBDENUM OXIDE, NANOSHEETS, SPECTROSCOPY, DEPENDENCE, SCATTERING, MECHANISM, GRAPHENE, MOS2",
author = "Binjie Zheng and Zegao Wang and Yuanfu Chen and Wanli Zhang and Xuesong Li",
year = "2018",
month = jul,
day = "25",
doi = "10.1088/2053-1583/aad2ba",
language = "English",
volume = "5",
journal = "2D materials",
issn = "2053-1583",
publisher = "IOP Publishing",
number = "4",

}

RIS

TY - JOUR

T1 - Centimeter-sized 2D alpha-MoO3 single crystal

T2 - growth, Raman anisotropy, and optoelectronic properties

AU - Zheng, Binjie

AU - Wang, Zegao

AU - Chen, Yuanfu

AU - Zhang, Wanli

AU - Li, Xuesong

PY - 2018/7/25

Y1 - 2018/7/25

N2 - Centimeter-sized 2D layered alpha-MoO3 single crystal has been grown by a facile physical vapor deposition method. The lateral size of alpha-MoO3 single crystals can be tunable from micrometer to centimeter by controlling the inner diameter of the quartz tube reaction chamber. The as-grown alpha-MoO3 exhibits strong in-plane Raman anisotropy, where A(g) Raman modes give the direction of crystallographic orientation, which can be used to rapidly and precisely identify the crystallinity of large-area alpha-MoO3 through selected-area angel-resolved polarized Raman spectroscopy. Moreover, the photodetectors based on annealed alpha-MoO3 single crystals exhibit excellent optoelectronic performance with a photoresponsivity of 65.6 A W-1 and a fast photoresponse time of 2 s.

AB - Centimeter-sized 2D layered alpha-MoO3 single crystal has been grown by a facile physical vapor deposition method. The lateral size of alpha-MoO3 single crystals can be tunable from micrometer to centimeter by controlling the inner diameter of the quartz tube reaction chamber. The as-grown alpha-MoO3 exhibits strong in-plane Raman anisotropy, where A(g) Raman modes give the direction of crystallographic orientation, which can be used to rapidly and precisely identify the crystallinity of large-area alpha-MoO3 through selected-area angel-resolved polarized Raman spectroscopy. Moreover, the photodetectors based on annealed alpha-MoO3 single crystals exhibit excellent optoelectronic performance with a photoresponsivity of 65.6 A W-1 and a fast photoresponse time of 2 s.

KW - two-dimensional semiconductor

KW - physical vapor deposition

KW - molybdenum trioxide

KW - Raman anisotropy

KW - photoresponse

KW - BLACK PHOSPHORUS

KW - MOLYBDENUM OXIDE

KW - NANOSHEETS

KW - SPECTROSCOPY

KW - DEPENDENCE

KW - SCATTERING

KW - MECHANISM

KW - GRAPHENE

KW - MOS2

U2 - 10.1088/2053-1583/aad2ba

DO - 10.1088/2053-1583/aad2ba

M3 - Journal article

VL - 5

JO - 2D materials

JF - 2D materials

SN - 2053-1583

IS - 4

M1 - 045011

ER -