Band-gap engineering by Bi intercalation of graphene on Ir(111)

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  • Jonas Warmuth, Univ Hamburg, University of Hamburg, Dept Phys
  • ,
  • Albert Bruix
  • ,
  • Matteo Michiardi
  • ,
  • Torben Haenke, Univ Hamburg, University of Hamburg, Dept Phys
  • ,
  • Marco Bianchi
  • Jens Wiebe, Univ Hamburg, University of Hamburg, Dept Phys
  • ,
  • Roland Wiesendanger, Univ Hamburg, University of Hamburg, Dept Phys
  • ,
  • Bjork Hammer
  • Philip Hofmann
  • Alexander A. Khajetoorians, Radboud Univ Nijmegen, Radboud University Nijmegen, Inst Mol & Mat

We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling microscopy (STM) reveals a hexagonal surface structure and a dislocation network upon Bi intercalation, which we attribute to a root 3 x root 3 R30 degrees Bi structure on the underlying Ir(111) surface. Ab initio calculations show that this Bi structure is the most energetically favorable and illustrate that STM measurements are most sensitive to C atoms in close proximity to intercalated Bi atoms. Additionally, Bi intercalation induces a band gap (E-g = 0.42 eV) at the Dirac point of graphene and an overall n doping (similar to 0.39 eV) as seen in angular-resolved photoemission spectroscopy. We attribute the emergence of the band gap to the dislocation network which forms favorably along certain parts of the moire structure induced by the graphene/Ir(111) interface.

Original languageEnglish
Article number165437
JournalPhysical Review B
Number of pages9
Publication statusPublished - 27 Apr 2016

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