Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN

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Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN. / Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted; Julsgaard, Brian.

In: AIP Advances, Vol. 9, No. 2, 025322, 2019.

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@article{02889898b3694f8c8894e3a21e62e395,
title = "Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN",
abstract = "The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 10^6±1 s^−1. Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.",
author = "Ievgen Boturchuk and Scheffler, {Leopold Julian} and Larsen, {Arne Nylandsted} and Brian Julsgaard",
year = "2019",
doi = "10.1063/1.5086796",
language = "English",
volume = "9",
journal = "AIP Advances",
number = "2",

}

RIS

TY - JOUR

T1 - Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN

AU - Boturchuk, Ievgen

AU - Scheffler, Leopold Julian

AU - Larsen, Arne Nylandsted

AU - Julsgaard, Brian

PY - 2019

Y1 - 2019

N2 - The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 10^6±1 s^−1. Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.

AB - The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 10^6±1 s^−1. Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.

UR - http://www.scopus.com/inward/record.url?scp=85062375257&partnerID=8YFLogxK

U2 - 10.1063/1.5086796

DO - 10.1063/1.5086796

M3 - Journal article

VL - 9

JO - AIP Advances

JF - AIP Advances

IS - 2

M1 - 025322

ER -