Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN

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The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 10^6±1 s^−1. Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.
Original languageEnglish
Article number025322
JournalAIP Advances
Number of pages6
Publication statusPublished - 2019

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