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The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around E C - 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 10 6±1 s -1 . Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.
Original language | English |
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Article number | 025322 |
Journal | AIP Advances |
Volume | 9 |
Issue | 2 |
Number of pages | 6 |
DOIs | |
Publication status | Published - Feb 2019 |
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ID: 145572354