In this paper, a new structure is proposed for a boost dc–dc converter based on the voltage-lift (VL) technique. The main advantages of the proposed converter are its lack of transformer, simple structure, free and low input current ripple, high voltage gain capability by using an input source, suitable voltage stress on semiconductors and lower output capacitance. Herein, the analysis of the proposed converter operating and its elements voltage and current relations in continuous conduction mode (CCM) and discontinuous conduction mode (DCM) are presented, and the voltage gain of each operating mode is individually calculated. Additionally, the critical inductance, current stress of switches, calculation of passive components’ values and efficiency are analyzed. In addition, the proposed converter is compared with other studied boost converters in terms of ideal voltage gain in the CCM and the number of active and passive components, maximum voltage stress on semiconductors, and situation of input current ripples. The correctness of the theoretical concepts is examined from the experimental results using the laboratory prototype.