A MEMS metamaterial for dynamic terahertz wave switching

Zhengli Han; Takuya Takahashi; Hiroshi Toshiyoshi

doi:10.1109/NANO.2016.7751545

A MEMS metamaterial for dynamic terahertz wave switching

Zhengli Han
, Takuya Takahashi
, Hiroshi Toshiyoshi

Research output: Contribution to book/anthology/report/proceeding › Article in proceedings › Research › peer-review

Abstract

A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Number of pages	4
Publisher	Institute of Electrical and Electronics Engineers Inc.
Publication date	21 Nov 2016
Pages	735-738
Article number	7751545
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751545
Publication status	Published - 21 Nov 2016
Externally published	Yes
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 22 Aug 2016 → 25 Aug 2016

Conference

Conference	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	22/08/2016 → 25/08/2016

Series	16th International Conference on Nanotechnology - IEEE NANO 2016

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10.1109/NANO.2016.7751545

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title = "A MEMS metamaterial for dynamic terahertz wave switching",

abstract = "A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.",

author = "Zhengli Han and Takuya Takahashi and Hiroshi Toshiyoshi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/NANO.2016.7751545",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

pages = "735--738",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Han, Z, Takahashi, T & Toshiyoshi, H 2016, A MEMS metamaterial for dynamic terahertz wave switching. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751545, Institute of Electrical and Electronics Engineers Inc., 16th International Conference on Nanotechnology - IEEE NANO 2016, pp. 735-738, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 22/08/2016. https://doi.org/10.1109/NANO.2016.7751545

A MEMS metamaterial for dynamic terahertz wave switching. / Han, Zhengli; Takahashi, Takuya; Toshiyoshi, Hiroshi.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 735-738 7751545 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Contribution to book/anthology/report/proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - A MEMS metamaterial for dynamic terahertz wave switching

AU - Han, Zhengli

AU - Takahashi, Takuya

AU - Toshiyoshi, Hiroshi

PY - 2016/11/21

Y1 - 2016/11/21

N2 - A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.

AB - A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.

UR - https://www.scopus.com/pages/publications/85006844165

U2 - 10.1109/NANO.2016.7751545

DO - 10.1109/NANO.2016.7751545

M3 - Article in proceedings

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T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 735

EP - 738

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016

Y2 - 22 August 2016 through 25 August 2016

ER -

A MEMS metamaterial for dynamic terahertz wave switching

Abstract

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