A Hybrid Spin-CMOS Flash ADC based on Spin Hall Effect and Spin Transfer Torque

Hamdam Ghanatian Najafabadi, Hooman Farkhani, Farshad Moradi

Research output: Contribution to book/anthology/report/proceedingArticle in proceedingsResearchpeer-review

Abstract


Original languageEnglish
Title of host publicationProceedings - 2022 IEEE 40th International Conference on Computer Design, ICCD 2022
Number of pages4
PublisherIEEE
Publication dateOct 2022
Pages701-704
ISBN (Electronic)9781665461863
DOIs
Publication statusPublished - Oct 2022
Event40th IEEE International Conference on Computer Design, ICCD 2022 - Olympic Valley, United States
Duration: 23 Oct 202226 Oct 2022

Conference

Conference40th IEEE International Conference on Computer Design, ICCD 2022
Country/TerritoryUnited States
CityOlympic Valley
Period23/10/202226/10/2022
SeriesProceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors
Volume2022

Keywords

  • Flash ADC
  • magnetic tunnel junction (MTJ)
  • spin-Hall effect (SHE)
  • spin-transfer torque (STT)

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