A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

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A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure. / Zhu, Tianyu; Liang, Yao; Zhang, Chitengfei; Wang, Zegao; Dong, Mingdong; Wang, Chuanbin; Yang, Meijun; Goto, Takashi; Tu, Rong; Zhang, Song.

In: RSC Advances, Vol. 10, No. 27, 2020, p. 16088-16093.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Zhu, T, Liang, Y, Zhang, C, Wang, Z, Dong, M, Wang, C, Yang, M, Goto, T, Tu, R & Zhang, S 2020, 'A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure', RSC Advances, vol. 10, no. 27, pp. 16088-16093. https://doi.org/10.1039/d0ra00734j

APA

Zhu, T., Liang, Y., Zhang, C., Wang, Z., Dong, M., Wang, C., Yang, M., Goto, T., Tu, R., & Zhang, S. (2020). A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure. RSC Advances, 10(27), 16088-16093. https://doi.org/10.1039/d0ra00734j

CBE

Zhu T, Liang Y, Zhang C, Wang Z, Dong M, Wang C, Yang M, Goto T, Tu R, Zhang S. 2020. A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure. RSC Advances. 10(27):16088-16093. https://doi.org/10.1039/d0ra00734j

MLA

Vancouver

Author

Zhu, Tianyu ; Liang, Yao ; Zhang, Chitengfei ; Wang, Zegao ; Dong, Mingdong ; Wang, Chuanbin ; Yang, Meijun ; Goto, Takashi ; Tu, Rong ; Zhang, Song. / A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure. In: RSC Advances. 2020 ; Vol. 10, No. 27. pp. 16088-16093.

Bibtex

@article{e170fe89446f4de88d0d30dd4bd3b952,
title = "A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure",
abstract = "Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.",
author = "Tianyu Zhu and Yao Liang and Chitengfei Zhang and Zegao Wang and Mingdong Dong and Chuanbin Wang and Meijun Yang and Takashi Goto and Rong Tu and Song Zhang",
year = "2020",
doi = "10.1039/d0ra00734j",
language = "English",
volume = "10",
pages = "16088--16093",
journal = "R S C Advances",
issn = "2046-2069",
publisher = "RSC Publishing",
number = "27",

}

RIS

TY - JOUR

T1 - A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

AU - Zhu, Tianyu

AU - Liang, Yao

AU - Zhang, Chitengfei

AU - Wang, Zegao

AU - Dong, Mingdong

AU - Wang, Chuanbin

AU - Yang, Meijun

AU - Goto, Takashi

AU - Tu, Rong

AU - Zhang, Song

PY - 2020

Y1 - 2020

N2 - Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

AB - Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

UR - http://www.scopus.com/inward/record.url?scp=85084800330&partnerID=8YFLogxK

U2 - 10.1039/d0ra00734j

DO - 10.1039/d0ra00734j

M3 - Journal article

AN - SCOPUS:85084800330

VL - 10

SP - 16088

EP - 16093

JO - R S C Advances

JF - R S C Advances

SN - 2046-2069

IS - 27

ER -