A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

Tianyu Zhu; Yao Liang; Chitengfei Zhang; Zegao Wang; Mingdong Dong; Chuanbin Wang; Meijun Yang; Takashi Goto; Rong Tu; Song Zhang

doi:10.1039/d0ra00734j

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

Tianyu Zhu, Yao Liang, Chitengfei Zhang, Zegao Wang, Mingdong Dong, Chuanbin Wang, Meijun Yang, Takashi Goto, Rong Tu, Song Zhang^*

^*Corresponding author for this work

Interdisciplinary Nanoscience Center - INANO-Fysik, iNANO-huset

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

6 Citations (Scopus)

Abstract

Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min^-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

Original language	English
Journal	RSC Advances
Volume	10
Issue	27
Pages (from-to)	16088-16093
Number of pages	6
ISSN	2046-2069
DOIs	https://doi.org/10.1039/d0ra00734j
Publication status	Published - 2020

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10.1039/d0ra00734j

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@article{e170fe89446f4de88d0d30dd4bd3b952,

title = "A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure",

abstract = "Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.",

author = "Tianyu Zhu and Yao Liang and Chitengfei Zhang and Zegao Wang and Mingdong Dong and Chuanbin Wang and Meijun Yang and Takashi Goto and Rong Tu and Song Zhang",

year = "2020",

doi = "10.1039/d0ra00734j",

language = "English",

volume = "10",

pages = "16088--16093",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "27",

}

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure. / Zhu, Tianyu; Liang, Yao; Zhang, Chitengfei et al.
In: RSC Advances, Vol. 10, No. 27, 2020, p. 16088-16093.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaper › Journal article › Research › peer-review

TY - JOUR

T1 - A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

AU - Zhu, Tianyu

AU - Liang, Yao

AU - Zhang, Chitengfei

AU - Wang, Zegao

AU - Dong, Mingdong

AU - Wang, Chuanbin

AU - Yang, Meijun

AU - Goto, Takashi

AU - Tu, Rong

AU - Zhang, Song

PY - 2020

Y1 - 2020

N2 - Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

AB - Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.

UR - http://www.scopus.com/inward/record.url?scp=85084800330&partnerID=8YFLogxK

U2 - 10.1039/d0ra00734j

DO - 10.1039/d0ra00734j

M3 - Journal article

AN - SCOPUS:85084800330

SN - 2046-2069

VL - 10

SP - 16088

EP - 16093

JO - RSC Advances

JF - RSC Advances

IS - 27

ER -

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

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