2D SnSe/Si heterojunction for self-driven broadband photodetectors

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Standard

2D SnSe/Si heterojunction for self-driven broadband photodetectors. / Hao, Lanzhong; Wang, Zegao; Xu, Hanyang; Yan, Keyou; Dong, Shichang; Liu, Hui; Du, Yongjun; Wu, Yupeng; Liu, Yunjie; Dong, Mingdong.

In: 2D materials, Vol. 6, No. 3, 034004, 05.2019.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Hao, L, Wang, Z, Xu, H, Yan, K, Dong, S, Liu, H, Du, Y, Wu, Y, Liu, Y & Dong, M 2019, '2D SnSe/Si heterojunction for self-driven broadband photodetectors', 2D materials, vol. 6, no. 3, 034004. https://doi.org/10.1088/2053-1583/ab15f7

APA

Hao, L., Wang, Z., Xu, H., Yan, K., Dong, S., Liu, H., Du, Y., Wu, Y., Liu, Y., & Dong, M. (2019). 2D SnSe/Si heterojunction for self-driven broadband photodetectors. 2D materials, 6(3), [034004]. https://doi.org/10.1088/2053-1583/ab15f7

CBE

Hao L, Wang Z, Xu H, Yan K, Dong S, Liu H, Du Y, Wu Y, Liu Y, Dong M. 2019. 2D SnSe/Si heterojunction for self-driven broadband photodetectors. 2D materials. 6(3):Article 034004. https://doi.org/10.1088/2053-1583/ab15f7

MLA

Vancouver

Hao L, Wang Z, Xu H, Yan K, Dong S, Liu H et al. 2D SnSe/Si heterojunction for self-driven broadband photodetectors. 2D materials. 2019 May;6(3). 034004. https://doi.org/10.1088/2053-1583/ab15f7

Author

Hao, Lanzhong ; Wang, Zegao ; Xu, Hanyang ; Yan, Keyou ; Dong, Shichang ; Liu, Hui ; Du, Yongjun ; Wu, Yupeng ; Liu, Yunjie ; Dong, Mingdong. / 2D SnSe/Si heterojunction for self-driven broadband photodetectors. In: 2D materials. 2019 ; Vol. 6, No. 3.

Bibtex

@article{35b3135fc86d406880667daec260f751,
title = "2D SnSe/Si heterojunction for self-driven broadband photodetectors",
abstract = " Van der Waals heterojunctions based on atomically thin 2D materials have opened up new realms in modern semiconductor industry. However, it is still challenging to fabricate large-area ultrathin 2D films. Herein, we successfully fabricate wafer-size 2D SnSe films on Si substrate by magnetron sputtering technique, enabling the formation of SnSe/Si van der Waals (vdWs) heterojunction device. The high-resolution transmission electron microscopy is employed to character the structure of SnSe film and SnSe/Si heterojunction with ideal orthorhombic structure and atomically abrupt interface, respectively. The energy diagram of SnSe/Si heterojunction is constructed, exhibiting similar barrier heights for electron and hole carrier. The SnSe/Si heterojunction shows obvious diode behavior with rectification ratio of ∼1.6 ×10 4 , forward current of ∼194.5 mA cm -2 at ±1.0 V. Furthermore, owing to the high crystalline orientation, specific energy-band alignment, as well as the strong built-in electrical field, the SnSe/Si heterojunction illustrates a broadband photodetecting properties with the wavelength ranging from ultraviolet to near-infrared light, showing a high detectivity of 4.4 ×10 12 cmHz 1/2 W -1 , a high responsivity of 566.4 mA mW -1 and an ultrafast response/recovery time of ∼1.6/47.7 s under zero external bias. This work provides a new strategy for fabrication of low cost 2D optoelectronic devices with high-performance. ",
keywords = "broadband, heterojunction, photodetector, self-driven, tin monoselenide",
author = "Lanzhong Hao and Zegao Wang and Hanyang Xu and Keyou Yan and Shichang Dong and Hui Liu and Yongjun Du and Yupeng Wu and Yunjie Liu and Mingdong Dong",
year = "2019",
month = may,
doi = "10.1088/2053-1583/ab15f7",
language = "English",
volume = "6",
journal = "2D materials",
issn = "2053-1583",
publisher = "IOP Publishing",
number = "3",

}

RIS

TY - JOUR

T1 - 2D SnSe/Si heterojunction for self-driven broadband photodetectors

AU - Hao, Lanzhong

AU - Wang, Zegao

AU - Xu, Hanyang

AU - Yan, Keyou

AU - Dong, Shichang

AU - Liu, Hui

AU - Du, Yongjun

AU - Wu, Yupeng

AU - Liu, Yunjie

AU - Dong, Mingdong

PY - 2019/5

Y1 - 2019/5

N2 - Van der Waals heterojunctions based on atomically thin 2D materials have opened up new realms in modern semiconductor industry. However, it is still challenging to fabricate large-area ultrathin 2D films. Herein, we successfully fabricate wafer-size 2D SnSe films on Si substrate by magnetron sputtering technique, enabling the formation of SnSe/Si van der Waals (vdWs) heterojunction device. The high-resolution transmission electron microscopy is employed to character the structure of SnSe film and SnSe/Si heterojunction with ideal orthorhombic structure and atomically abrupt interface, respectively. The energy diagram of SnSe/Si heterojunction is constructed, exhibiting similar barrier heights for electron and hole carrier. The SnSe/Si heterojunction shows obvious diode behavior with rectification ratio of ∼1.6 ×10 4 , forward current of ∼194.5 mA cm -2 at ±1.0 V. Furthermore, owing to the high crystalline orientation, specific energy-band alignment, as well as the strong built-in electrical field, the SnSe/Si heterojunction illustrates a broadband photodetecting properties with the wavelength ranging from ultraviolet to near-infrared light, showing a high detectivity of 4.4 ×10 12 cmHz 1/2 W -1 , a high responsivity of 566.4 mA mW -1 and an ultrafast response/recovery time of ∼1.6/47.7 s under zero external bias. This work provides a new strategy for fabrication of low cost 2D optoelectronic devices with high-performance.

AB - Van der Waals heterojunctions based on atomically thin 2D materials have opened up new realms in modern semiconductor industry. However, it is still challenging to fabricate large-area ultrathin 2D films. Herein, we successfully fabricate wafer-size 2D SnSe films on Si substrate by magnetron sputtering technique, enabling the formation of SnSe/Si van der Waals (vdWs) heterojunction device. The high-resolution transmission electron microscopy is employed to character the structure of SnSe film and SnSe/Si heterojunction with ideal orthorhombic structure and atomically abrupt interface, respectively. The energy diagram of SnSe/Si heterojunction is constructed, exhibiting similar barrier heights for electron and hole carrier. The SnSe/Si heterojunction shows obvious diode behavior with rectification ratio of ∼1.6 ×10 4 , forward current of ∼194.5 mA cm -2 at ±1.0 V. Furthermore, owing to the high crystalline orientation, specific energy-band alignment, as well as the strong built-in electrical field, the SnSe/Si heterojunction illustrates a broadband photodetecting properties with the wavelength ranging from ultraviolet to near-infrared light, showing a high detectivity of 4.4 ×10 12 cmHz 1/2 W -1 , a high responsivity of 566.4 mA mW -1 and an ultrafast response/recovery time of ∼1.6/47.7 s under zero external bias. This work provides a new strategy for fabrication of low cost 2D optoelectronic devices with high-performance.

KW - broadband

KW - heterojunction

KW - photodetector

KW - self-driven

KW - tin monoselenide

UR - http://www.scopus.com/inward/record.url?scp=85065641897&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/ab15f7

DO - 10.1088/2053-1583/ab15f7

M3 - Journal article

AN - SCOPUS:85065641897

VL - 6

JO - 2D materials

JF - 2D materials

SN - 2053-1583

IS - 3

M1 - 034004

ER -