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Søren Ulstrup

Tunable electronic structure in gallium chalcogenide van der Waals compounds

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Standard

Tunable electronic structure in gallium chalcogenide van der Waals compounds. / Shevitski, Brian; Ulstrup, Søren; Koch, Roland J.; Cai, Hui; Tongay, Sefaattin; Moreschini, Luca; Jozwiak, Chris; Bostwick, Aaron; Zettl, Alex; Rotenberg, Eli; Aloni, Shaul.

In: Physical Review B, Vol. 100, No. 16, 165112, 2019.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Shevitski, B, Ulstrup, S, Koch, RJ, Cai, H, Tongay, S, Moreschini, L, Jozwiak, C, Bostwick, A, Zettl, A, Rotenberg, E & Aloni, S 2019, 'Tunable electronic structure in gallium chalcogenide van der Waals compounds', Physical Review B, vol. 100, no. 16, 165112. https://doi.org/10.1103/PhysRevB.100.165112

APA

Shevitski, B., Ulstrup, S., Koch, R. J., Cai, H., Tongay, S., Moreschini, L., Jozwiak, C., Bostwick, A., Zettl, A., Rotenberg, E., & Aloni, S. (2019). Tunable electronic structure in gallium chalcogenide van der Waals compounds. Physical Review B, 100(16), [165112]. https://doi.org/10.1103/PhysRevB.100.165112

CBE

Shevitski B, Ulstrup S, Koch RJ, Cai H, Tongay S, Moreschini L, Jozwiak C, Bostwick A, Zettl A, Rotenberg E, Aloni S. 2019. Tunable electronic structure in gallium chalcogenide van der Waals compounds. Physical Review B. 100(16):Article 165112. https://doi.org/10.1103/PhysRevB.100.165112

MLA

Vancouver

Shevitski B, Ulstrup S, Koch RJ, Cai H, Tongay S, Moreschini L et al. Tunable electronic structure in gallium chalcogenide van der Waals compounds. Physical Review B. 2019;100(16). 165112. https://doi.org/10.1103/PhysRevB.100.165112

Author

Shevitski, Brian ; Ulstrup, Søren ; Koch, Roland J. ; Cai, Hui ; Tongay, Sefaattin ; Moreschini, Luca ; Jozwiak, Chris ; Bostwick, Aaron ; Zettl, Alex ; Rotenberg, Eli ; Aloni, Shaul. / Tunable electronic structure in gallium chalcogenide van der Waals compounds. In: Physical Review B. 2019 ; Vol. 100, No. 16.

Bibtex

@article{c45752654564476d90a0a7ef8c111271,
title = "Tunable electronic structure in gallium chalcogenide van der Waals compounds",
abstract = "Transition-metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe by using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by in situ potassium deposition as well as by forming GaSxSe1-x alloy compounds. We find that potassium-dosed samples exhibit a substantial change of the dispersion around the valence-band maximum (VBM). The observed band dispersion resembles that of a single tetralayer and is consistent with a transition from the direct-gap character of the bulk to the indirect-gap character expected for monolayer GaSe. Upon alloying with sulfur, we observe a phase transition from AB to AA′ stacking. Alloying also results in a rigid energy shift of the VBM towards higher binding energies, which correlates with a blueshift in the luminescence. The increase of the band gap upon sulfur alloying does not appear to change the dispersion or character of the VBM appreciably, implying that it is possible to engineer the gap of these materials while maintaining their salient electronic properties.",
author = "Brian Shevitski and S{\o}ren Ulstrup and Koch, {Roland J.} and Hui Cai and Sefaattin Tongay and Luca Moreschini and Chris Jozwiak and Aaron Bostwick and Alex Zettl and Eli Rotenberg and Shaul Aloni",
year = "2019",
doi = "10.1103/PhysRevB.100.165112",
language = "English",
volume = "100",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

}

RIS

TY - JOUR

T1 - Tunable electronic structure in gallium chalcogenide van der Waals compounds

AU - Shevitski, Brian

AU - Ulstrup, Søren

AU - Koch, Roland J.

AU - Cai, Hui

AU - Tongay, Sefaattin

AU - Moreschini, Luca

AU - Jozwiak, Chris

AU - Bostwick, Aaron

AU - Zettl, Alex

AU - Rotenberg, Eli

AU - Aloni, Shaul

PY - 2019

Y1 - 2019

N2 - Transition-metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe by using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by in situ potassium deposition as well as by forming GaSxSe1-x alloy compounds. We find that potassium-dosed samples exhibit a substantial change of the dispersion around the valence-band maximum (VBM). The observed band dispersion resembles that of a single tetralayer and is consistent with a transition from the direct-gap character of the bulk to the indirect-gap character expected for monolayer GaSe. Upon alloying with sulfur, we observe a phase transition from AB to AA′ stacking. Alloying also results in a rigid energy shift of the VBM towards higher binding energies, which correlates with a blueshift in the luminescence. The increase of the band gap upon sulfur alloying does not appear to change the dispersion or character of the VBM appreciably, implying that it is possible to engineer the gap of these materials while maintaining their salient electronic properties.

AB - Transition-metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe by using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by in situ potassium deposition as well as by forming GaSxSe1-x alloy compounds. We find that potassium-dosed samples exhibit a substantial change of the dispersion around the valence-band maximum (VBM). The observed band dispersion resembles that of a single tetralayer and is consistent with a transition from the direct-gap character of the bulk to the indirect-gap character expected for monolayer GaSe. Upon alloying with sulfur, we observe a phase transition from AB to AA′ stacking. Alloying also results in a rigid energy shift of the VBM towards higher binding energies, which correlates with a blueshift in the luminescence. The increase of the band gap upon sulfur alloying does not appear to change the dispersion or character of the VBM appreciably, implying that it is possible to engineer the gap of these materials while maintaining their salient electronic properties.

UR - http://www.scopus.com/inward/record.url?scp=85073338266&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.100.165112

DO - 10.1103/PhysRevB.100.165112

M3 - Journal article

AN - SCOPUS:85073338266

VL - 100

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - 165112

ER -