Aarhus University Seal / Aarhus Universitets segl

Søren Ulstrup

Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from NanoARPES

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

DOI

The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue toward engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. Direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines the effect of electrical doping on the electronic band structure of twisted bilayer graphene using a back-gated device architecture for angle-resolved photoemission measurements with a nano-focused light spot. A twist angle of 12.2° is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.

Original languageEnglish
Article number2001656
JournalAdvanced Materials
Volume32
Issue31
Number of pages7
ISSN0935-9648
DOIs
Publication statusPublished - Aug 2020

    Research areas

  • flat bands, nanoARPES, twisted bilayer graphene, van der Waals heterostructures, van Hove singularitys, MAGIC-ANGLE, MOIRE BANDS

See relations at Aarhus University Citationformats

ID: 190877153