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Søren Ulstrup

Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111)

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Standard

Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111). / Koefoed, Line; Kongsfelt, Mikkel; Ulstrup, Søren; Cabo, Antonija Grubisic; Cassidy, Andrew; Whelan, Patrick R.; Bianchi, Marco; Dendzik, Maciej; Pizzocchero, Filippo; Jørgensen, Bjarke; Bøggild, Peter; Hornekær, Liv; Hofmann, Philip; Pedersen, Steen U.; Daasbjerg, Kim.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 11, 115306, 2015.

Research output: Contribution to journal/Conference contribution in journal/Contribution to newspaperJournal articleResearchpeer-review

Harvard

Koefoed, L, Kongsfelt, M, Ulstrup, S, Cabo, AG, Cassidy, A, Whelan, PR, Bianchi, M, Dendzik, M, Pizzocchero, F, Jørgensen, B, Bøggild, P, Hornekær, L, Hofmann, P, Pedersen, SU & Daasbjerg, K 2015, 'Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111)', Journal of Physics D: Applied Physics, vol. 48, no. 11, 115306. https://doi.org/10.1088/0022-3727/48/11/115306

APA

Koefoed, L., Kongsfelt, M., Ulstrup, S., Cabo, A. G., Cassidy, A., Whelan, P. R., Bianchi, M., Dendzik, M., Pizzocchero, F., Jørgensen, B., Bøggild, P., Hornekær, L., Hofmann, P., Pedersen, S. U., & Daasbjerg, K. (2015). Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111). Journal of Physics D: Applied Physics, 48(11), [115306]. https://doi.org/10.1088/0022-3727/48/11/115306

CBE

Koefoed L, Kongsfelt M, Ulstrup S, Cabo AG, Cassidy A, Whelan PR, Bianchi M, Dendzik M, Pizzocchero F, Jørgensen B, Bøggild P, Hornekær L, Hofmann P, Pedersen SU, Daasbjerg K. 2015. Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111). Journal of Physics D: Applied Physics. 48(11):Article 115306. https://doi.org/10.1088/0022-3727/48/11/115306

MLA

Vancouver

Koefoed L, Kongsfelt M, Ulstrup S, Cabo AG, Cassidy A, Whelan PR et al. Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111). Journal of Physics D: Applied Physics. 2015;48(11). 115306. https://doi.org/10.1088/0022-3727/48/11/115306

Author

Koefoed, Line ; Kongsfelt, Mikkel ; Ulstrup, Søren ; Cabo, Antonija Grubisic ; Cassidy, Andrew ; Whelan, Patrick R. ; Bianchi, Marco ; Dendzik, Maciej ; Pizzocchero, Filippo ; Jørgensen, Bjarke ; Bøggild, Peter ; Hornekær, Liv ; Hofmann, Philip ; Pedersen, Steen U. ; Daasbjerg, Kim. / Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111). In: Journal of Physics D: Applied Physics. 2015 ; Vol. 48, No. 11.

Bibtex

@article{1f89a226a2cf44e8b8833aef11a12d87,
title = "Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111)",
abstract = "High-quality growth of graphene and subsequent reliable transfer to insulating substrates are needed for various technological applications, such as flexible screens and high speed electronics. In this paper, we present a new electrochemical method for the transfer of large-area, high-quality single crystalline graphene from Ir(1 1 1) to Si/SiO2 under ambient conditions. The method is based on intercalation of tetraoctylammonium ions between the graphene layer and the Ir surface. This simple technique allows transfer of graphene single crystals having the same size as the substrate they are grown on (diameter approximate to 7 mm). In addition, the substrate can be reused for further growth cycles. A detailed Raman map analysis of the transferred graphene reveals straight lines, in which the Raman peaks characteristic for graphene are shifted. These lines originate from scratches in the Ir(1 1 1) crystal introduced by the polishing procedure. Furthermore, areas with numerous wrinkles exist inbetween these lines, forming a network across the entire graphene crystal. Hence, the initial characteristics and imprints left on the sheet of graphene in terms of strain and wrinkles from the growth process remain after transfer.",
keywords = "graphene, transfer, iridium, electrochemistry, intercalation, RAMAN-SPECTROSCOPY, GROWTH, COPPER, FILMS, GRAPHITE, DEFECTS, IRIDIUM, OXYGEN, SIZE, INTERCALATION",
author = "Line Koefoed and Mikkel Kongsfelt and S{\o}ren Ulstrup and Cabo, {Antonija Grubisic} and Andrew Cassidy and Whelan, {Patrick R.} and Marco Bianchi and Maciej Dendzik and Filippo Pizzocchero and Bjarke J{\o}rgensen and Peter B{\o}ggild and Liv Hornek{\ae}r and Philip Hofmann and Pedersen, {Steen U.} and Kim Daasbjerg",
year = "2015",
doi = "10.1088/0022-3727/48/11/115306",
language = "English",
volume = "48",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "Institute of Physics Publishing Ltd.",
number = "11",

}

RIS

TY - JOUR

T1 - Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(111)

AU - Koefoed, Line

AU - Kongsfelt, Mikkel

AU - Ulstrup, Søren

AU - Cabo, Antonija Grubisic

AU - Cassidy, Andrew

AU - Whelan, Patrick R.

AU - Bianchi, Marco

AU - Dendzik, Maciej

AU - Pizzocchero, Filippo

AU - Jørgensen, Bjarke

AU - Bøggild, Peter

AU - Hornekær, Liv

AU - Hofmann, Philip

AU - Pedersen, Steen U.

AU - Daasbjerg, Kim

PY - 2015

Y1 - 2015

N2 - High-quality growth of graphene and subsequent reliable transfer to insulating substrates are needed for various technological applications, such as flexible screens and high speed electronics. In this paper, we present a new electrochemical method for the transfer of large-area, high-quality single crystalline graphene from Ir(1 1 1) to Si/SiO2 under ambient conditions. The method is based on intercalation of tetraoctylammonium ions between the graphene layer and the Ir surface. This simple technique allows transfer of graphene single crystals having the same size as the substrate they are grown on (diameter approximate to 7 mm). In addition, the substrate can be reused for further growth cycles. A detailed Raman map analysis of the transferred graphene reveals straight lines, in which the Raman peaks characteristic for graphene are shifted. These lines originate from scratches in the Ir(1 1 1) crystal introduced by the polishing procedure. Furthermore, areas with numerous wrinkles exist inbetween these lines, forming a network across the entire graphene crystal. Hence, the initial characteristics and imprints left on the sheet of graphene in terms of strain and wrinkles from the growth process remain after transfer.

AB - High-quality growth of graphene and subsequent reliable transfer to insulating substrates are needed for various technological applications, such as flexible screens and high speed electronics. In this paper, we present a new electrochemical method for the transfer of large-area, high-quality single crystalline graphene from Ir(1 1 1) to Si/SiO2 under ambient conditions. The method is based on intercalation of tetraoctylammonium ions between the graphene layer and the Ir surface. This simple technique allows transfer of graphene single crystals having the same size as the substrate they are grown on (diameter approximate to 7 mm). In addition, the substrate can be reused for further growth cycles. A detailed Raman map analysis of the transferred graphene reveals straight lines, in which the Raman peaks characteristic for graphene are shifted. These lines originate from scratches in the Ir(1 1 1) crystal introduced by the polishing procedure. Furthermore, areas with numerous wrinkles exist inbetween these lines, forming a network across the entire graphene crystal. Hence, the initial characteristics and imprints left on the sheet of graphene in terms of strain and wrinkles from the growth process remain after transfer.

KW - graphene

KW - transfer

KW - iridium

KW - electrochemistry

KW - intercalation

KW - RAMAN-SPECTROSCOPY

KW - GROWTH

KW - COPPER

KW - FILMS

KW - GRAPHITE

KW - DEFECTS

KW - IRIDIUM

KW - OXYGEN

KW - SIZE

KW - INTERCALATION

U2 - 10.1088/0022-3727/48/11/115306

DO - 10.1088/0022-3727/48/11/115306

M3 - Journal article

VL - 48

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 11

M1 - 115306

ER -