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Søren Ulstrup

Bottom-up approach for the low-cost synthesis of graphene-alumina nanosheet interfaces using bimetallic alloys

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  • Luca Omiciuolo, Department of Physics, University of Trieste, Unknown
  • Eduardo R Hernández, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Campus de Cantoblanco, Unknown
  • Elisa Miniussi, Department of Physics, University of Trieste, Unknown
  • Fabrizio Orlando, Department of Physics, University of Trieste
  • ,
  • Paolo Lacovig, Elettra-Sincrotrone Trieste S.C.p.A.
  • ,
  • Silvano Lizzit, Elettra-Sincrotrone Trieste S.C.p.A.
  • ,
  • Tevfik Onur Menteş, Elettra-Sincrotrone Trieste S.C.p.A., Unknown
  • Andrea Locatelli, Elettra-Sincrotrone Trieste S.C.p.A., Unknown
  • Rosanna Larciprete, CNR, Institute for Complex Systems, Roma
  • ,
  • Marco Bianchi
  • Søren Ulstrup
  • Philip Hofmann
  • Dario Alfè, Department of Earth Sciences, University College London, Department of Physics and Astronomy, University College London, IOM-CNR, DEMOCRITOS National Simulation Centre
  • ,
  • Alessandro Baraldi, Department of Physics, University of Trieste, Elettra-Sincrotrone Trieste S.C.p.A., IOM-CNR Laboratorio TASC
The production of high-quality graphene-oxide interfaces is normally achieved by graphene growth via chemical vapour deposition on a metallic surface, followed by transfer of the C layer onto the oxide, by atomic layer and physical vapour deposition of the oxide on graphene or by carbon deposition on top of oxide surfaces. These methods, however, come with a series of issues: they are complex, costly and can easily result in damage to the carbon network, with detrimental effects on the carrier mobility. Here we show that the growth of a graphene layer on a bimetallic Ni3Al alloy and its subsequent exposure to oxygen at 520 K result in the formation of a 1.5 nm thick alumina nanosheet underneath graphene. This new, simple and low-cost strategy based on the use of alloys opens a promising route to the direct synthesis of a wide range of interfaces formed by graphene and high-κ dielectrics.
Original languageEnglish
Article number5062
JournalNature Communications
Volume5
Number of pages8
ISSN2041-1723
DOIs
Publication statusPublished - 2014

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