Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties

Binjie Zheng; Yuanfu Chen; Zegao Wang; Fei Qi; Zhishuo Huang; Xin Hao; Pingjian Li; Wanli Zhang; Yanrong Li

doi:10.1088/2053-1583/3/3/035024

Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties

Binjie Zheng, Yuanfu Chen^*, Zegao Wang, Fei Qi, Zhishuo Huang, Xin Hao, Pingjian Li, Wanli Zhang, Yanrong Li

^*Corresponding author af dette arbejde

Interdisciplinary Nanoscience Center

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

100 Citationer (Scopus)

Abstract

For the first time, large-area, vertically oriented few-layered hafnium disulfide (V-HfS2) nanosheets have been grown by chemical vapor deposition. The individual HfS2 nanosheets are well [001] oriented, with highly crystalline quality. Far different from conventional van der Waals epitaxial growth mechanism for two-dimensional transition metal dichalcogenides, a novel dangling-bond-assisted self-seeding growth mechanism is proposed to describe the growth of V-HfS2 nanosheets: difficult migration of HfS2 adatoms on substrate surface results in HfS2 seeds growing perpendicularly to the substrate; V-HfS2 nanosheets inherit the growth direction of HfS2 seeds; V-HfS2 nanosheets further expand in the in-plane direction with time evolution. Moreover, the V-HfS2 nanosheets show strong and broadened photons absorption from near infrared to ultraviolet; the V-HfS2-based photodetector exhibits an ultrafast photoresponse time of 24 ms, and a high photosensitivity ca. 10(3) for 405 nmlaser.

Originalsprog	Engelsk
Artikelnummer	035024
Tidsskrift	2D materials
Vol/bind	3
Nummer	3
Antal sider	9
ISSN	2053-1583
DOI	https://doi.org/10.1088/2053-1583/3/3/035024
Status	Udgivet - sep. 2016

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10.1088/2053-1583/3/3/035024Licens: CC BY

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@article{daddb998060f4433af05d5e089f3e63b,

title = "Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties",

abstract = "For the first time, large-area, vertically oriented few-layered hafnium disulfide (V-HfS2) nanosheets have been grown by chemical vapor deposition. The individual HfS2 nanosheets are well [001] oriented, with highly crystalline quality. Far different from conventional van der Waals epitaxial growth mechanism for two-dimensional transition metal dichalcogenides, a novel dangling-bond-assisted self-seeding growth mechanism is proposed to describe the growth of V-HfS2 nanosheets: difficult migration of HfS2 adatoms on substrate surface results in HfS2 seeds growing perpendicularly to the substrate; V-HfS2 nanosheets inherit the growth direction of HfS2 seeds; V-HfS2 nanosheets further expand in the in-plane direction with time evolution. Moreover, the V-HfS2 nanosheets show strong and broadened photons absorption from near infrared to ultraviolet; the V-HfS2-based photodetector exhibits an ultrafast photoresponse time of 24 ms, and a high photosensitivity ca. 10(3) for 405 nmlaser.",

keywords = "two-dimensional semiconductor, chemical vapor deposition, hafnium disulfide, vertically oriented, photoresponse, CHEMICAL-VAPOR-DEPOSITION, HIGH-QUALITY MONOLAYER, MOS2 NANOSHEETS, ALIGNED LAYERS, ZRS2, SUBSTRATE, FILMS, WSE2, PHOTODETECTORS, DICHALCOGENIDE",

author = "Binjie Zheng and Yuanfu Chen and Zegao Wang and Fei Qi and Zhishuo Huang and Xin Hao and Pingjian Li and Wanli Zhang and Yanrong Li",

year = "2016",

month = sep,

doi = "10.1088/2053-1583/3/3/035024",

language = "English",

volume = "3",

journal = "2D materials",

issn = "2053-1583",

publisher = "IOP Publishing",

number = "3",

}

TY - JOUR

T1 - Vertically oriented few-layered HfS2 nanosheets

T2 - growth mechanism and optical properties

AU - Zheng, Binjie

AU - Chen, Yuanfu

AU - Wang, Zegao

AU - Qi, Fei

AU - Huang, Zhishuo

AU - Hao, Xin

AU - Li, Pingjian

AU - Zhang, Wanli

AU - Li, Yanrong

PY - 2016/9

Y1 - 2016/9

N2 - For the first time, large-area, vertically oriented few-layered hafnium disulfide (V-HfS2) nanosheets have been grown by chemical vapor deposition. The individual HfS2 nanosheets are well [001] oriented, with highly crystalline quality. Far different from conventional van der Waals epitaxial growth mechanism for two-dimensional transition metal dichalcogenides, a novel dangling-bond-assisted self-seeding growth mechanism is proposed to describe the growth of V-HfS2 nanosheets: difficult migration of HfS2 adatoms on substrate surface results in HfS2 seeds growing perpendicularly to the substrate; V-HfS2 nanosheets inherit the growth direction of HfS2 seeds; V-HfS2 nanosheets further expand in the in-plane direction with time evolution. Moreover, the V-HfS2 nanosheets show strong and broadened photons absorption from near infrared to ultraviolet; the V-HfS2-based photodetector exhibits an ultrafast photoresponse time of 24 ms, and a high photosensitivity ca. 10(3) for 405 nmlaser.

AB - For the first time, large-area, vertically oriented few-layered hafnium disulfide (V-HfS2) nanosheets have been grown by chemical vapor deposition. The individual HfS2 nanosheets are well [001] oriented, with highly crystalline quality. Far different from conventional van der Waals epitaxial growth mechanism for two-dimensional transition metal dichalcogenides, a novel dangling-bond-assisted self-seeding growth mechanism is proposed to describe the growth of V-HfS2 nanosheets: difficult migration of HfS2 adatoms on substrate surface results in HfS2 seeds growing perpendicularly to the substrate; V-HfS2 nanosheets inherit the growth direction of HfS2 seeds; V-HfS2 nanosheets further expand in the in-plane direction with time evolution. Moreover, the V-HfS2 nanosheets show strong and broadened photons absorption from near infrared to ultraviolet; the V-HfS2-based photodetector exhibits an ultrafast photoresponse time of 24 ms, and a high photosensitivity ca. 10(3) for 405 nmlaser.

KW - two-dimensional semiconductor

KW - chemical vapor deposition

KW - hafnium disulfide

KW - vertically oriented

KW - photoresponse

KW - CHEMICAL-VAPOR-DEPOSITION

KW - HIGH-QUALITY MONOLAYER

KW - MOS2 NANOSHEETS

KW - ALIGNED LAYERS

KW - ZRS2

KW - SUBSTRATE

KW - FILMS

KW - WSE2

KW - PHOTODETECTORS

KW - DICHALCOGENIDE

U2 - 10.1088/2053-1583/3/3/035024

DO - 10.1088/2053-1583/3/3/035024

M3 - Journal article

SN - 2053-1583

VL - 3

JO - 2D materials

JF - 2D materials

IS - 3

M1 - 035024

ER -

Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties

Abstract

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