Vacancy-hydrogen defects in silicon studied by Raman spectroscopy

E. A. Lavrov, J. Weber, L. Huang, Brian Bech Nielsen

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

46 Citationer (Scopus)

Citationsformater

@article{1667b4b0ba8a11dbbee902004c4f4f50,

title = "Vacancy-hydrogen defects in silicon studied by Raman spectroscopy",

author = "Lavrov, {E. A.} and J. Weber and L. Huang and Nielsen, {Brian Bech}",

year = "2001",

language = "English",

volume = "64",

pages = "35204",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

}