Unchanged thermopower enhancement at the semiconductor-metal transition in correlated FeSb2-xTex

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  • P. Sun
  • ,
  • Martin Søndergaard, Danmark
  • Y. Sun, Danmark
  • S. Johnsen, Danmark
  • B. B. Iversen
  • F. Steglich
  • Interdisciplinær Nanoscience Forskerskole
  • Institut for Kemi
  • Interdisciplinary Nanoscience Center
Substitution of Sb in FeSb2 by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass m*. Spanning the entire range of the semiconductor-metal crossover, we observed an almost constant enhancement of the measured thermopower compared to that estimated by the classical theory of electron diffusion. Using the latter for a quantitative description one has to employ an enhancement factor of 10-30. Our observations point to the importance of electron-electron correlations in the thermal transport of FeSb2, and suggest a route to design thermoelectric materials for cryogenic applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556645]
OriginalsprogEngelsk
TidsskriftApplied Physics Letters
Vol/bind98
Nummer7
Sider (fra-til)072105-1 - 072105-3
Antal sider3
ISSN0003-6951
DOI
StatusUdgivet - 14 feb. 2011

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