Temperature coefficient of resistance and thermal boundary conductance determination of ruthenium thin films by micro four-point probe

TY - JOUR

T1 - Temperature coefficient of resistance and thermal boundary conductance determination of ruthenium thin films by micro four-point probe

AU - Beltrán-Pitarch, Braulio

AU - Guralnik, Benny

AU - Borup, Kasper A.

AU - Adelmann, Christoph

AU - Hansen, Ole

AU - Pryds, Nini

AU - Petersen, Dirch H.

N1 - Publisher Copyright: © 2024 The Author(s). Published by IOP Publishing Ltd.

PY - 2024/6

Y1 - 2024/6

N2 - Accurate characterization of the temperature coefficient of resistance (α TCR) of electrically conductive materials is pertinent for reducing self-heating in electronic devices. In-situ non-destructive measurements of α TCR using the micro four-point probe (M4PP) technique have previously been demonstrated on platinum (Pt) thin films deposited on fused silica, assuming the thermal conductivity of the substrate as known. In this study, we expand the M4PP method to obtain the α TCR on industrially relevant stacks, comprising ruthenium (Ru) thin films (3.3 nm and 5.2 nm thick) deposited on bulk silicon (Si), separated by a 90 nm SiO2 spacer. The new M4PP methodology allows simultaneous determination of both α TCR and the total thermal boundary conductance (G TBC) between the metallic film and its substrate. We measured the α TCR and the G TBC to be 542 ± 18 ppm K−1 and 15.6 ± 1.3 MW m−2K−1 for 3.3 nm Ru, and 982 ± 46 ppm K−1 and 19.3 ± 2.3 MW m−2K−1 for 5.2 nm Ru. This is in good agreement with independent measurements of α TCR. Our methodology demonstrates the potential of M4PP to characterize thermal properties of metallic thin films used in semiconductor technology.

AB - Accurate characterization of the temperature coefficient of resistance (α TCR) of electrically conductive materials is pertinent for reducing self-heating in electronic devices. In-situ non-destructive measurements of α TCR using the micro four-point probe (M4PP) technique have previously been demonstrated on platinum (Pt) thin films deposited on fused silica, assuming the thermal conductivity of the substrate as known. In this study, we expand the M4PP method to obtain the α TCR on industrially relevant stacks, comprising ruthenium (Ru) thin films (3.3 nm and 5.2 nm thick) deposited on bulk silicon (Si), separated by a 90 nm SiO2 spacer. The new M4PP methodology allows simultaneous determination of both α TCR and the total thermal boundary conductance (G TBC) between the metallic film and its substrate. We measured the α TCR and the G TBC to be 542 ± 18 ppm K−1 and 15.6 ± 1.3 MW m−2K−1 for 3.3 nm Ru, and 982 ± 46 ppm K−1 and 19.3 ± 2.3 MW m−2K−1 for 5.2 nm Ru. This is in good agreement with independent measurements of α TCR. Our methodology demonstrates the potential of M4PP to characterize thermal properties of metallic thin films used in semiconductor technology.

KW - equivalent thermal resistance

KW - TCR

KW - thermal barrier

KW - thermal boundary resistance

KW - thermal resistivity

UR - http://www.scopus.com/inward/record.url?scp=85189306704&partnerID=8YFLogxK

U2 - 10.1088/1361-6501/ad366b

DO - 10.1088/1361-6501/ad366b

M3 - Journal article

AN - SCOPUS:85189306704

SN - 0957-0233

VL - 35

JO - Measurement Science and Technology

JF - Measurement Science and Technology

IS - 6

M1 - 066012

ER -