Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface x-ray diffraction

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avisTidsskriftartikelForskningpeer review

  • Diogo Duarte dos Reis, Universidade Federal de Minas Gerais, Brasilien
  • Lucas Barreto, Danmark
  • Marco Bianchi
  • Guilberme Almeida Silva Ribeiro, Universidade Federal de Minas Gerais, Brasilien
  • Edmar Avellar Soares, Universidade Federal de Minas Gerais, Brasilien
  • Wendell Simões e Silva, Universidade Federal de Minas Gerais, Brasilien
  • Vagner Eustáquio de Carvalho, Universidade Federal de Minas Gerais, Brasilien
  • Jonathan Rawle, Diamond Light Source Ltd, Storbritannien
  • Moritz Hoesch, Diamond Light Source Ltd, Storbritannien
  • Chris Nicklin, Diamond Light Source Ltd, Storbritannien
  • Willians Principe Fernandes, Universidade Federal de Sao Joao del-Rei, Brasilien
  • Jianli Mi, Danmark
  • Bo Brummerstedt Iversen
  • Philip Hofmann
The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron
diffraction and surface x-ray diffraction at room temperature. Both approaches show that the crystal is terminated
by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface
relaxations obtained by both techniques are in good agreement with each other and found to be small. This
includes the relaxation of the van der Waals gap between the first two quintuple layers.
OriginalsprogEngelsk
Artikelnummer041404
TidsskriftPhysical Review B
Vol/bind88
Antal sider4
ISSN2469-9950
DOI
StatusUdgivet - 2013

Se relationer på Aarhus Universitet Citationsformater

ID: 55176181