Surface Gate-Defined Quantum Dots in MoS2 with Bi Contacts

Riku Tataka; Alka Sharma; Motoya Shinozaki; Tomoya Johmen; Takeshi Kumasaka; Yong P. Chen; Tomohiro Otsuka

doi:10.7566/JPSJ.93.094601

Surface Gate-Defined Quantum Dots in MoS₂ with Bi Contacts

Riku Tataka, Alka Sharma, Motoya Shinozaki, Tomoya Johmen, Takeshi Kumasaka, Yong P. Chen, Tomohiro Otsuka

Institut for Fysik og Astronomi

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

Abstract

Transition-metal dichalcogenides (TMDCs) are promising materials for nano and quantum devices, with performance dependent on electrical contacts and gate electrodes at cryogenic temperatures. In this study, we utilized semimetal bismuth as the contact metal to fabricate two types of devices based on MoS₂-Bi: field-effect transistors (FETs) and quantum dot devices. We observed linear current–voltage characteristics in the FET devices at temperatures of 4.2 and 0.4 K, within the range of −0.03 to 0.03 V, essential for quantum devices. For the MoS₂ quantum dot device, we utilized intrinsic Schottky barriers between MoS₂ and gold as gate electrodes to form and control the quantum dots. Coulomb diamonds were observed in the MoS₂ devices at temperature of 0.4 K, with extracted parameters matching our device design. Our simplified fabrication process eliminates the need for additional fabricate gate insulators steps, enhancing design flexibility and fabrication possibilities for advanced quantum devices, including vertically integrated systems.

Originalsprog	Engelsk
Artikelnummer	094601
Tidsskrift	Journal of the Physical Society of Japan
Vol/bind	93
Nummer	9
ISSN	0031-9015
DOI	https://doi.org/10.7566/JPSJ.93.094601
Status	Udgivet - 15 sep. 2024

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Citationsformater

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title = "Surface Gate-Defined Quantum Dots in MoS2 with Bi Contacts",

abstract = "Transition-metal dichalcogenides (TMDCs) are promising materials for nano and quantum devices, with performance dependent on electrical contacts and gate electrodes at cryogenic temperatures. In this study, we utilized semimetal bismuth as the contact metal to fabricate two types of devices based on MoS2-Bi: field-effect transistors (FETs) and quantum dot devices. We observed linear current–voltage characteristics in the FET devices at temperatures of 4.2 and 0.4 K, within the range of −0.03 to 0.03 V, essential for quantum devices. For the MoS2 quantum dot device, we utilized intrinsic Schottky barriers between MoS2 and gold as gate electrodes to form and control the quantum dots. Coulomb diamonds were observed in the MoS2 devices at temperature of 0.4 K, with extracted parameters matching our device design. Our simplified fabrication process eliminates the need for additional fabricate gate insulators steps, enhancing design flexibility and fabrication possibilities for advanced quantum devices, including vertically integrated systems.",

author = "Riku Tataka and Alka Sharma and Motoya Shinozaki and Tomoya Johmen and Takeshi Kumasaka and Chen, {Yong P.} and Tomohiro Otsuka",

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AU - Tataka, Riku

AU - Sharma, Alka

AU - Shinozaki, Motoya

AU - Johmen, Tomoya

AU - Kumasaka, Takeshi

AU - Chen, Yong P.

AU - Otsuka, Tomohiro

PY - 2024/9/15

Y1 - 2024/9/15

N2 - Transition-metal dichalcogenides (TMDCs) are promising materials for nano and quantum devices, with performance dependent on electrical contacts and gate electrodes at cryogenic temperatures. In this study, we utilized semimetal bismuth as the contact metal to fabricate two types of devices based on MoS2-Bi: field-effect transistors (FETs) and quantum dot devices. We observed linear current–voltage characteristics in the FET devices at temperatures of 4.2 and 0.4 K, within the range of −0.03 to 0.03 V, essential for quantum devices. For the MoS2 quantum dot device, we utilized intrinsic Schottky barriers between MoS2 and gold as gate electrodes to form and control the quantum dots. Coulomb diamonds were observed in the MoS2 devices at temperature of 0.4 K, with extracted parameters matching our device design. Our simplified fabrication process eliminates the need for additional fabricate gate insulators steps, enhancing design flexibility and fabrication possibilities for advanced quantum devices, including vertically integrated systems.

AB - Transition-metal dichalcogenides (TMDCs) are promising materials for nano and quantum devices, with performance dependent on electrical contacts and gate electrodes at cryogenic temperatures. In this study, we utilized semimetal bismuth as the contact metal to fabricate two types of devices based on MoS2-Bi: field-effect transistors (FETs) and quantum dot devices. We observed linear current–voltage characteristics in the FET devices at temperatures of 4.2 and 0.4 K, within the range of −0.03 to 0.03 V, essential for quantum devices. For the MoS2 quantum dot device, we utilized intrinsic Schottky barriers between MoS2 and gold as gate electrodes to form and control the quantum dots. Coulomb diamonds were observed in the MoS2 devices at temperature of 0.4 K, with extracted parameters matching our device design. Our simplified fabrication process eliminates the need for additional fabricate gate insulators steps, enhancing design flexibility and fabrication possibilities for advanced quantum devices, including vertically integrated systems.

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