Subcycle Nonlinear Response of Doped 4 H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy

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  • Abebe T. Tarekegne, Danmarks Tekniske Universitet
  • ,
  • Korbinian J. Kaltenecker, Danmarks Tekniske Universitet
  • ,
  • Pernille Klarskov
  • Krzysztof Iwaszczuk, Danmarks Tekniske Universitet, Crystal Fibre A/S
  • ,
  • Weifang Lu, Danmarks Tekniske Universitet
  • ,
  • Haiyan Ou, Danmarks Tekniske Universitet
  • ,
  • Kion Norrman, King Fahd University of Petroleum and Minerals
  • ,
  • Peter U. Jepsen, DTU

We investigate single-cycle terahertz (THz) field-induced nonlinear absorption in doped silicon carbide. We find that the nonlinear response is ultrafast, and we observe up to 20% reduction of transmission of single THz pulses at peak field strengths of 280 kV/cm. We model the field and temperature dependence of the nonlinear response by a finite-difference time-domain simulation that incorporates the temporally nonlocal nonlinear conductivity of the silicon carbide. Nonlinear two-dimensional THz spectroscopy reveals that the nonlinear absorption has an ultrafast subpicosecond recovery time, with contributions from both sum-frequency generation and four-wave mixing, in the form of a photon-echo signal. The ultrafast nonlinearity with its equally fast recovery time makes silicon carbide an interesting candidate material for extremely fast nonlinear THz modulators.

OriginalsprogEngelsk
TidsskriftACS Photonics
Vol/bind7
Nummer1
Sider (fra-til)221-231
Antal sider11
DOI
StatusUdgivet - 2020

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