Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: Decoupling the influence of W dopant and O vacancies on the film properties

Ivan Samatov; Bjarke Rolighed Jeppesen; Arne Nylandsted Larsen; Sanjay Ram

doi:10.1007/s00339-016-9983-0

Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: Decoupling the influence of W dopant and O vacancies on the film properties

Ivan Samatov, Bjarke Rolighed Jeppesen, Arne Nylandsted Larsen, Sanjay Ram

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

9 Citationer (Scopus)

Abstract

Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O ₂-dilution fraction in the Ar sputtering gas. The W-doping level, and contributions of intrinsic oxygen vacancies and W dopant to the free carrier concentration were studied. Windows of optimum deposition conditions are demonstrated where amorphous and smooth-surfaced IWO films are obtained with low resistivity of 3.5 × 10 ⁻⁴ Ω cm, high mobility of 45 cm ² v ⁻¹ s ⁻¹, and high optical transparency (visible and NIR transparencies of 83 and 80 %, respectively). The observed optoelectronic properties are discussed in light of the underlying electron transport mechanisms.

Originalsprog	Engelsk
Artikelnummer	122:458
Tidsskrift	Applied Physics A: Materials Science & Processing
Vol/bind	122
Nummer	4
Sider (fra-til)	1-10
Antal sider	10
ISSN	0947-8396
DOI	https://doi.org/10.1007/s00339-016-9983-0
Status	Udgivet - 1 apr. 2016

Adgang til dokumentet

10.1007/s00339-016-9983-0

Andre filer og links

Link to publication in Scopus

Citationsformater

@article{aa12159f4291470588baf2bfbfa729af,

title = "Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: Decoupling the influence of W dopant and O vacancies on the film properties",

abstract = "Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O 2-dilution fraction in the Ar sputtering gas. The W-doping level, and contributions of intrinsic oxygen vacancies and W dopant to the free carrier concentration were studied. Windows of optimum deposition conditions are demonstrated where amorphous and smooth-surfaced IWO films are obtained with low resistivity of 3.5 × 10 −4 Ω cm, high mobility of 45 cm 2 v −1 s −1, and high optical transparency (visible and NIR transparencies of 83 and 80 %, respectively). The observed optoelectronic properties are discussed in light of the underlying electron transport mechanisms.",

author = "Ivan Samatov and Jeppesen, {Bjarke Rolighed} and Larsen, {Arne Nylandsted} and Sanjay Ram",

year = "2016",

month = apr,

day = "1",

doi = "10.1007/s00339-016-9983-0",

language = "English",

volume = "122",

pages = "1--10",

journal = "Applied Physics A: Materials Science & Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "4",

}

Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: Decoupling the influence of W dopant and O vacancies on the film properties. / Samatov, Ivan; Jeppesen, Bjarke Rolighed ; Larsen, Arne Nylandsted et al.
I: Applied Physics A: Materials Science & Processing, Bind 122, Nr. 4, 122:458, 01.04.2016, s. 1-10.

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

TY - JOUR

T1 - Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: Decoupling the influence of W dopant and O vacancies on the film properties

AU - Samatov, Ivan

AU - Jeppesen, Bjarke Rolighed

AU - Larsen, Arne Nylandsted

AU - Ram, Sanjay

PY - 2016/4/1

Y1 - 2016/4/1

N2 - Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O 2-dilution fraction in the Ar sputtering gas. The W-doping level, and contributions of intrinsic oxygen vacancies and W dopant to the free carrier concentration were studied. Windows of optimum deposition conditions are demonstrated where amorphous and smooth-surfaced IWO films are obtained with low resistivity of 3.5 × 10 −4 Ω cm, high mobility of 45 cm 2 v −1 s −1, and high optical transparency (visible and NIR transparencies of 83 and 80 %, respectively). The observed optoelectronic properties are discussed in light of the underlying electron transport mechanisms.

AB - Tungsten-doped indium oxide (IWO) thin films were deposited at room temperature using rf-magnetron sputtering. The optical, electrical, and structural properties of the IWO films were studied as functions of the O 2-dilution fraction in the Ar sputtering gas. The W-doping level, and contributions of intrinsic oxygen vacancies and W dopant to the free carrier concentration were studied. Windows of optimum deposition conditions are demonstrated where amorphous and smooth-surfaced IWO films are obtained with low resistivity of 3.5 × 10 −4 Ω cm, high mobility of 45 cm 2 v −1 s −1, and high optical transparency (visible and NIR transparencies of 83 and 80 %, respectively). The observed optoelectronic properties are discussed in light of the underlying electron transport mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=84961932801&partnerID=8YFLogxK

U2 - 10.1007/s00339-016-9983-0

DO - 10.1007/s00339-016-9983-0

M3 - Journal article

SN - 0947-8396

VL - 122

SP - 1

EP - 10

JO - Applied Physics A: Materials Science & Processing

JF - Applied Physics A: Materials Science & Processing

IS - 4

M1 - 122:458

ER -

Room-temperature rf-magnetron sputter-deposited W-doped indium oxide: Decoupling the influence of W dopant and O vacancies on the film properties

Abstract

Adgang til dokumentet

Andre filer og links

Fingeraftryk

Citationsformater