Observation and theory of the H2 defect in silicon

Observation and theory of the H₂ defect in silicon

Publikation: Bidrag til bog/antologi/rapport/proceeding › Konferencebidrag i proceedings › Forskning › peer review

Originalsprog	Engelsk
Titel	Proceedings of the 17th International Conference on Defects in Semiconductors ICDS-17
Publikationsdato	1993
Status	Udgivet - 1993
Begivenhed	The 17th International Conference on Defects in Semiconductors ICDS-17 - Gmunden, Østrig Varighed: 17 dec. 2010 → …

Konference	The 17th International Conference on Defects in Semiconductors ICDS-17
Land/Område	Østrig
By	Gmunden
Periode	17/12/2010 → …

@inproceedings{06526a50b77611dbbee902004c4f4f50,

title = "Observation and theory of the H2 defect in silicon",

author = "Nielsen, \{Brian Bech\} and Holbech, \{Jens Dybkj{\ae}r\} and R. Jones and P. Sitch and S. {\"O}berg",

year = "1993",

language = "English",

booktitle = "Proceedings of the 17th International Conference on Defects in Semiconductors ICDS-17",

note = "The 17th International Conference on Defects in Semiconductors ICDS-17 ; Conference date: 17-12-2010",

}

TY - GEN

T1 - Observation and theory of the H2 defect in silicon

AU - Nielsen, Brian Bech

AU - Holbech, Jens Dybkjær

AU - Jones, R.

AU - Sitch, P.

AU - Öberg, S.

PY - 1993

Y1 - 1993

M3 - Article in proceedings

BT - Proceedings of the 17th International Conference on Defects in Semiconductors ICDS-17

T2 - The 17th International Conference on Defects in Semiconductors ICDS-17

Y2 - 17 December 2010

ER -