Near-infrared-ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

Christian Uhrenfeldt, Jacques Chevallier, Arne Nylandsted Larsen, Brian Bech Nielsen

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

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@article{63c85b4301d341cf9f6dbcc4b813f3f4,

title = "Near-infrared-ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure",

author = "Christian Uhrenfeldt and Jacques Chevallier and {Nylandsted Larsen}, Arne and {Bech Nielsen}, Brian",

year = "2011",

doi = "10.1063/1.3581015",

language = "English",

volume = "109",

pages = "094314",

journal = "Journal of Applied Physics",

issn = "0148-6349",

publisher = "American Institute of Physics",

}

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

TY - JOUR

T1 - Near-infrared-ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

AU - Uhrenfeldt, Christian

AU - Chevallier, Jacques

AU - Nylandsted Larsen, Arne

AU - Bech Nielsen, Brian

PY - 2011

Y1 - 2011

U2 - 10.1063/1.3581015

DO - 10.1063/1.3581015

M3 - Journal article

SN - 0148-6349

VL - 109

SP - 094314

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -