TY - JOUR
T1 - Modeling of superheating and undercooling of strained semiconductor nanocrystals in SiO
AU - Têtu, A.
AU - Bech Nielsen, B.
N1 - Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/12/5
Y1 - 2012/12/5
N2 - Although superheating and undercooling of nanocrystals have been observed and simply modeled, physical aspects of the nanocrystals, like strain, have previously been ignored. In this article the size dependence of the melting and solidification point temperature of semiconductor nanocrystals embedded in an interface epitaxy free matrix is modeled, taking into account the strain state of the nanocrystals. A configurational entropy term is introduced to render the model applicable to any crystal size, including bulk. The model is validated on the system of InSb nanocrystals embedded in SiO under a high compressive strain.
AB - Although superheating and undercooling of nanocrystals have been observed and simply modeled, physical aspects of the nanocrystals, like strain, have previously been ignored. In this article the size dependence of the melting and solidification point temperature of semiconductor nanocrystals embedded in an interface epitaxy free matrix is modeled, taking into account the strain state of the nanocrystals. A configurational entropy term is introduced to render the model applicable to any crystal size, including bulk. The model is validated on the system of InSb nanocrystals embedded in SiO under a high compressive strain.
UR - http://www.scopus.com/inward/record.url?scp=84869074652&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/24/48/485301
DO - 10.1088/0953-8984/24/48/485301
M3 - Journal article
C2 - 23114731
AN - SCOPUS:84869074652
SN - 0953-8984
VL - 24
JO - Journal of Physics: Condensed Matter
JF - Journal of Physics: Condensed Matter
IS - 48
ER -