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Microstructure and Thermoelectric Properties of Zn1-xAgxSb Thin Films Grown by Single-Target Magnetron Sputtering

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Microstructure and Thermoelectric Properties of Zn1-xAgxSb Thin Films Grown by Single-Target Magnetron Sputtering. / Song, Lirong; Zhang, Jiawei; Iversen, Bo B.

I: ACS Applied Energy Materials, Bind 3, Nr. 3, 2020, s. 2055-2062.

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avisTidsskriftartikelForskningpeer review

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@article{3365ee6cd7e141edabbbd3ec0e3bd61f,
title = "Microstructure and Thermoelectric Properties of Zn1-xAgxSb Thin Films Grown by Single-Target Magnetron Sputtering",
abstract = "Thermoelectric thin films could potentially power the Internet of Things devices including microsized sensors and actuators without the need of battery replacement. Zinc antimonides are among the cheapest high-performance thermoelectric materials, and here we demonstrate the use of a ZnSb phase single target to deposit Zn1-xAgxSb (x = 0, 0.01, and 0.02) thin films on fused silica substrates via direct current magnetron sputtering. In order to achieve optimal thermoelectric properties, the effects of the annealing temperature, Ar gas pressure, and deposition time on the film microstructure were investigated, and Ag doping was introduced in the Zn-Sb binary system. There is a clear decrease in the electrical resistivity due to Ag doping, and unlike the undoped ZnSb thin film, the Ag-doped ZnSb thin films show a change in the film texture when varying the deposition time. A high power factor value of 14.9 μV cm-1 K-2 at 525 K and a conservatively estimated maximum zT of ∼0.5 at 575 K using the thermal conductivity of the bulk material are obtained in the Ag-doped thin film. The highest estimated value of average zT is 0.16 for a temperature range between 300 and 575 K. Thus, the present work demonstrates a simple synthesis route for growing high-performance thermoelectric ZnSb thin films.",
keywords = "Ag doping, single-target magnetron sputtering, thermoelectric thin films, X-ray diffraction, ZnSb",
author = "Lirong Song and Jiawei Zhang and Iversen, {Bo B.}",
year = "2020",
doi = "10.1021/acsaem.9b01842",
language = "English",
volume = "3",
pages = "2055--2062",
journal = "ACS Applied Energy Materials",
issn = "2574-0962",
publisher = "AMER CHEMICAL SOC",
number = "3",

}

RIS

TY - JOUR

T1 - Microstructure and Thermoelectric Properties of Zn1-xAgxSb Thin Films Grown by Single-Target Magnetron Sputtering

AU - Song, Lirong

AU - Zhang, Jiawei

AU - Iversen, Bo B.

PY - 2020

Y1 - 2020

N2 - Thermoelectric thin films could potentially power the Internet of Things devices including microsized sensors and actuators without the need of battery replacement. Zinc antimonides are among the cheapest high-performance thermoelectric materials, and here we demonstrate the use of a ZnSb phase single target to deposit Zn1-xAgxSb (x = 0, 0.01, and 0.02) thin films on fused silica substrates via direct current magnetron sputtering. In order to achieve optimal thermoelectric properties, the effects of the annealing temperature, Ar gas pressure, and deposition time on the film microstructure were investigated, and Ag doping was introduced in the Zn-Sb binary system. There is a clear decrease in the electrical resistivity due to Ag doping, and unlike the undoped ZnSb thin film, the Ag-doped ZnSb thin films show a change in the film texture when varying the deposition time. A high power factor value of 14.9 μV cm-1 K-2 at 525 K and a conservatively estimated maximum zT of ∼0.5 at 575 K using the thermal conductivity of the bulk material are obtained in the Ag-doped thin film. The highest estimated value of average zT is 0.16 for a temperature range between 300 and 575 K. Thus, the present work demonstrates a simple synthesis route for growing high-performance thermoelectric ZnSb thin films.

AB - Thermoelectric thin films could potentially power the Internet of Things devices including microsized sensors and actuators without the need of battery replacement. Zinc antimonides are among the cheapest high-performance thermoelectric materials, and here we demonstrate the use of a ZnSb phase single target to deposit Zn1-xAgxSb (x = 0, 0.01, and 0.02) thin films on fused silica substrates via direct current magnetron sputtering. In order to achieve optimal thermoelectric properties, the effects of the annealing temperature, Ar gas pressure, and deposition time on the film microstructure were investigated, and Ag doping was introduced in the Zn-Sb binary system. There is a clear decrease in the electrical resistivity due to Ag doping, and unlike the undoped ZnSb thin film, the Ag-doped ZnSb thin films show a change in the film texture when varying the deposition time. A high power factor value of 14.9 μV cm-1 K-2 at 525 K and a conservatively estimated maximum zT of ∼0.5 at 575 K using the thermal conductivity of the bulk material are obtained in the Ag-doped thin film. The highest estimated value of average zT is 0.16 for a temperature range between 300 and 575 K. Thus, the present work demonstrates a simple synthesis route for growing high-performance thermoelectric ZnSb thin films.

KW - Ag doping

KW - single-target magnetron sputtering

KW - thermoelectric thin films

KW - X-ray diffraction

KW - ZnSb

UR - http://www.scopus.com/inward/record.url?scp=85078478296&partnerID=8YFLogxK

U2 - 10.1021/acsaem.9b01842

DO - 10.1021/acsaem.9b01842

M3 - Journal article

AN - SCOPUS:85078478296

VL - 3

SP - 2055

EP - 2062

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

SN - 2574-0962

IS - 3

ER -