Luminescence decay dynamics of self-assembled germanium islands in silicon

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    Abstract

    The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures.
    OriginalsprogEngelsk
    TidsskriftApplied Physics Letters
    Vol/bind98
    Nummer9
    Sider (fra-til)093101
    Antal sider3
    ISSN0003-6951
    DOI
    StatusUdgivet - 2011

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