Abstract
The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures.
Originalsprog | Engelsk |
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Tidsskrift | Applied Physics Letters |
Vol/bind | 98 |
Nummer | 9 |
Sider (fra-til) | 093101 |
Antal sider | 3 |
ISSN | 0003-6951 |
DOI | |
Status | Udgivet - 2011 |