Light emission from silicon with tin-containing nanocrystals

Søren Roesgaard Nielsen; Jacques Chevallier; Peter I. Gaiduk; John Lundsgaard Hansen; Pia Bomholt Jensen; Arne Nylandsted Larsen; Axel Svane; Peter Balling; Brian Julsgaard

doi:10.1063/1.4926596

Light emission from silicon with tin-containing nanocrystals

Søren Roesgaard Nielsen, Jacques Chevallier, Peter I. Gaiduk, John Lundsgaard Hansen, Pia Bomholt Jensen, Arne Nylandsted Larsen, Axel Svane, Peter Balling, Brian Julsgaard

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avis › Tidsskriftartikel › Forskning › peer review

8 Citationer (Scopus)

Abstract

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 degrees C to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to approximate to 10(17) cm(-3) and approximate to 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. (C) 2015 Author(s).

Originalsprog	Engelsk
Artikelnummer	077114
Tidsskrift	R S C Advances
Vol/bind	5
Nummer	7
Antal sider	6
ISSN	2046-2069
DOI	https://doi.org/10.1063/1.4926596
Status	Udgivet - jul. 2015

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10.1063/1.4926596

Citationsformater

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title = "Light emission from silicon with tin-containing nanocrystals",

abstract = "Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 degrees C to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to approximate to 10(17) cm(-3) and approximate to 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. (C) 2015 Author(s).",

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author = "Nielsen, {S{\o}ren Roesgaard} and Jacques Chevallier and Gaiduk, {Peter I.} and Hansen, {John Lundsgaard} and Jensen, {Pia Bomholt} and Larsen, {Arne Nylandsted} and Axel Svane and Peter Balling and Brian Julsgaard",

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AU - Nielsen, Søren Roesgaard

AU - Chevallier, Jacques

AU - Gaiduk, Peter I.

AU - Hansen, John Lundsgaard

AU - Jensen, Pia Bomholt

AU - Larsen, Arne Nylandsted

AU - Svane, Axel

AU - Balling, Peter

AU - Julsgaard, Brian

PY - 2015/7

Y1 - 2015/7

N2 - Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 degrees C to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to approximate to 10(17) cm(-3) and approximate to 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. (C) 2015 Author(s).

AB - Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 degrees C to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to approximate to 10(17) cm(-3) and approximate to 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. (C) 2015 Author(s).

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KW - SI

KW - ALLOYS

KW - SN

KW - PHOTOLUMINESCENCE

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DO - 10.1063/1.4926596

M3 - Journal article

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VL - 5

JO - R S C Advances

JF - R S C Advances

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ER -

Light emission from silicon with tin-containing nanocrystals

Abstract

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