Er sensitization by a thin Si layer: Interaction-distance dependence

Brian Julsgaard, Ying-Wei Lu, Rasmus Vincentz Skougaard Jensen, Thomas Garm Pedersen, K. Pedersen, Jacques Chevallier, Peter Balling, Arne Nylandsted Larsen

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Abstract

From photoluminescence measurements on sensitized erbium in a-Si/SiO2:Er/SiO2 multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be 0.22±0.02 nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium 4I13/24I15/2 transition may lead to an exaggerated estimate of the interaction distance.

OriginalsprogEngelsk
TidsskriftPhysical Review B
Vol/bind84
Nummer8
Sider (fra-til)085403
Antal sider7
ISSN2469-9950
DOI
StatusUdgivet - 2011

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