Enhancing MoS2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts through Dielectric Screening

TY - JOUR

T1 - Enhancing MoS2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts through Dielectric Screening

AU - Ouyang, Yi

AU - Jiang, Zhihao

AU - Ulstrup, Søren

AU - Guo, Zheng

AU - Wang, Zegao

AU - Dong, MD

PY - 2024/12/10

Y1 - 2024/12/10

N2 - The high electrical contact resistance at the metal–semiconductor interface hinders the practical application of two-dimensional (2D) semiconductor electronics in the postsilicon era. Conventional strategies toward Ohmic contact involve optimizing contact electrode materials. In this work, we utilize the band structure tunability of a 2D semiconductor by introducing a high dielectric constant gate dielectric to optimize the Schottky barrier height and width. Here, the dielectric screening effect induced by a solid-state lithium-ion electrolyte significantly reduces the Schottky barrier height to 2.7 meV. The resulting MoS2 transistor achieves a subthreshold swing of 84 mV/dev and a drastically reduced contact resistance of 4.36 kΩ μm. The contact properties of the device under operational conditions are studied by in situ Kelvin probe force microscopy. Furthermore, the device demonstrates promising photodetection capabilities for visible and near-infrared light along with a fast response time. This work presents an approach to enhancing dielectric contacts in 2D semiconductors for advancing high-performance electronic and optoelectronic devices.

AB - The high electrical contact resistance at the metal–semiconductor interface hinders the practical application of two-dimensional (2D) semiconductor electronics in the postsilicon era. Conventional strategies toward Ohmic contact involve optimizing contact electrode materials. In this work, we utilize the band structure tunability of a 2D semiconductor by introducing a high dielectric constant gate dielectric to optimize the Schottky barrier height and width. Here, the dielectric screening effect induced by a solid-state lithium-ion electrolyte significantly reduces the Schottky barrier height to 2.7 meV. The resulting MoS2 transistor achieves a subthreshold swing of 84 mV/dev and a drastically reduced contact resistance of 4.36 kΩ μm. The contact properties of the device under operational conditions are studied by in situ Kelvin probe force microscopy. Furthermore, the device demonstrates promising photodetection capabilities for visible and near-infrared light along with a fast response time. This work presents an approach to enhancing dielectric contacts in 2D semiconductors for advancing high-performance electronic and optoelectronic devices.

KW - Schottky barrier height

KW - dielectric screening

KW - molybdenum disulfide (MoS )

KW - solid-state lithium-ion electrolyte

KW - transistor

KW - molybdenum disulfide

UR - http://www.scopus.com/inward/record.url?scp=85210730715&partnerID=8YFLogxK

U2 - 10.1021/acsnano.4c05973

DO - 10.1021/acsnano.4c05973

M3 - Journal article

C2 - 39611299

SN - 1936-0851

VL - 18

SP - 33310

EP - 33318

JO - ACS Nano

JF - ACS Nano

IS - 49

ER -