Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing

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DOI

  • Nathan Cernetic, Univ Washington, University of Washington, University of Washington Seattle, Dept Mat Sci & Engn
  • ,
  • Tobias Weidner
  • Joe E. Baio, Oregon State Univ, Oregon State University, Oregon University System, Sch Chem Biol & Environm Engn
  • ,
  • Hao Lu, Max Planck Inst Polymer Res, Max Planck Society
  • ,
  • Hong Ma, Univ Washington, University of Washington, University of Washington Seattle, Dept Mat Sci & Engn
  • ,
  • Alex K. -Y. Jen, Univ Washington, University of Washington, University of Washington Seattle, Dept Chem Engn

Low-voltage self-assembled monolayer field-effect transistors (SAMFETs) that operate under an applied bias of less than -3 V and a high hole mobility of 10(-2) cm(2) V-1 s(-1) are reported. A self-assembled monolayer (SAM) with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high-voltage (AlOx/300 nm SiO2) and low-voltage (HfO2) dielectric platforms. High performance is achieved through enhanced SAM packing density via a heated assembly process and through improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methylthio head group combined with thermal annealing post gold source/drain electrode deposition to facilitate the interaction between SAM and electrode.

OriginalsprogEngelsk
TidsskriftAdvanced Functional Materials
Vol/bind25
Nummer33
Sider (fra-til)5376-5383
Antal sider8
ISSN1616-301X
DOI
StatusUdgivet - 2 sep. 2015
Eksternt udgivetJa

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