TY - JOUR
T1 - Analysis of Individual User Data Rate in a TDMA-RIS-NOMA Downlink System
T2 - Beyond the Limitation of Conventional NOMA
AU - Tiwari, Sourabh
AU - Sengupta, Joydeep
AU - Bokde, Neeraj Dhanraj
N1 - Publisher Copyright:
© 2023 by the authors.
PY - 2023/2
Y1 - 2023/2
N2 - Non-orthogonal multiple access (NOMA) is playing a pivotal role in 5G technology and has the potential to be useful in future developments beyond 5G. Although the effectiveness of NOMA has largely been explored in the sum throughput maximization, the identification of individual user data rate (IDR) still remained an unexplored area. Previously, it has been shown that reconfigurable intelligent surfaces (RIS) can lead to an overall improvement in the data rate by enhancing the effective channel gain of the downlink NOMA system. When time division multiple access (TDMA) is clubbed with multiple RISs in a distributed RIS-assisted NOMA (TDMA-RIS-NOMA) downlink system, a point-to-point communication model is created between access point-to-RIS-to-user device. Due to this point-to-point communication model, optimization of the phase shifts provided by meta-atoms of each RIS is facilitated. The optimized phase shifts of meta-atoms maximize the equivalent channel gain between the access point to the user. In this scenario, the channel becomes saturated and signal-to-interference plus noise ratio (SINR) becomes a function of power coefficients only. In this study, the power coefficients are calculated to maximize the SINR of each user belonging to a NOMA cluster using a geometric progression-based power allocation method such that IDR reaches its upper bound. These observations are also verified using the recently published magic matrix-based power allocation method. There are two observations from this study: (i) the IDR is better in the case of the TDMA-RIS-NOMA downlink system than using downlink NOMA alone and (ii) irrespective of the number of meta-atoms and total cluster power, the upper bound of IDR cannot be increased beyond a certain limit for all users except the highest channel gain user.
AB - Non-orthogonal multiple access (NOMA) is playing a pivotal role in 5G technology and has the potential to be useful in future developments beyond 5G. Although the effectiveness of NOMA has largely been explored in the sum throughput maximization, the identification of individual user data rate (IDR) still remained an unexplored area. Previously, it has been shown that reconfigurable intelligent surfaces (RIS) can lead to an overall improvement in the data rate by enhancing the effective channel gain of the downlink NOMA system. When time division multiple access (TDMA) is clubbed with multiple RISs in a distributed RIS-assisted NOMA (TDMA-RIS-NOMA) downlink system, a point-to-point communication model is created between access point-to-RIS-to-user device. Due to this point-to-point communication model, optimization of the phase shifts provided by meta-atoms of each RIS is facilitated. The optimized phase shifts of meta-atoms maximize the equivalent channel gain between the access point to the user. In this scenario, the channel becomes saturated and signal-to-interference plus noise ratio (SINR) becomes a function of power coefficients only. In this study, the power coefficients are calculated to maximize the SINR of each user belonging to a NOMA cluster using a geometric progression-based power allocation method such that IDR reaches its upper bound. These observations are also verified using the recently published magic matrix-based power allocation method. There are two observations from this study: (i) the IDR is better in the case of the TDMA-RIS-NOMA downlink system than using downlink NOMA alone and (ii) irrespective of the number of meta-atoms and total cluster power, the upper bound of IDR cannot be increased beyond a certain limit for all users except the highest channel gain user.
KW - downlink NOMA
KW - fairness
KW - individual data rate maximization
KW - meta-atom allocation
KW - power allocation
KW - reconfigurable intelligent surfaces (RIS)
U2 - 10.3390/electronics12030618
DO - 10.3390/electronics12030618
M3 - Journal article
AN - SCOPUS:85147821322
SN - 2079-9292
VL - 12
JO - Electronics
JF - Electronics
IS - 3
M1 - 618
ER -