A Novel Sensing Circuit with Large Sensing Margin for Embedded Spin-Transfer Torque MRAMs

Publikation: Bidrag til bog/antologi/rapport/proceedingKonferencebidrag i proceedingsForskningpeer review

DOI

    Leila Bagheriye, University of Zanjan, Siroos Toofan, University of Zanjan, Roghayeh Saeidi, Iran Telecommunication Research Center,
  • Farshad Moradi
Abstract— Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising candidate for next-generation computing systems. However, with increasing process variation and decreasing supply voltage, a big design challenge of embedded STT-MRAMs is to guarantee negligible read-disturbance and high yield. In this paper, to deal with the read reliability challenge, a high sensing margin sensing circuit with strong positive feedback is proposed. It improves the sensing margin (SM) by 10.42X/3.3X and a with 1.24X/1.59X lower read energy at iso-sensing time (2ns) in comparison with the conventional sensing scheme and the state-of-the art current-sampling-based SA. Moreover the proposed scheme supports six sigma and higher yield for both states 0 and 1, while the compared schemes fail.
OriginalsprogEngelsk
Titel2018 IEEE International Symposium on Circuits and Systems (ISCAS) : Proceedings
Antal sider5
ForlagIEEE
Udgivelsesår2018
Sider1-5
ISBN (trykt)978-1-5386-4882-7
ISBN (Elektronisk)978-1-5386-4881-0
DOI
StatusUdgivet - 2018
BegivenhedIEEE International Symposium on Circuits & Systems (ISCAS) - 2018 - Florence, Italien
Varighed: 27 maj 201830 maj 2018
http://www.iscas2018.org/

Konference

KonferenceIEEE International Symposium on Circuits & Systems (ISCAS) - 2018
LandItalien
ByFlorence
Periode27/05/201830/05/2018
Internetadresse

Bibliografisk note

E-ISSN: 2379-447X

Se relationer på Aarhus Universitet Citationsformater

ID: 138167372