TY - GEN
T1 - A MEMS metamaterial for dynamic terahertz wave switching
AU - Han, Zhengli
AU - Takahashi, Takuya
AU - Toshiyoshi, Hiroshi
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.
AB - A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the shutter operation.
UR - http://www.scopus.com/inward/record.url?scp=85006844165&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751545
DO - 10.1109/NANO.2016.7751545
M3 - Article in proceedings
AN - SCOPUS:85006844165
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 735
EP - 738
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -