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3ω correction method for eliminating resistance measurement error due to Joule heating

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  • Benny Guralnik, Capres A/S, Danmarks Tekniske Universtitet
  • ,
  • Ole Hansen, Danmarks Tekniske Universtitet
  • ,
  • Henrik H. Henrichsen, Capres A/S
  • ,
  • Braulio Beltrán-Pitarch, Danmarks Tekniske Universitet
  • ,
  • Frederik W. Østerberg, Capres A/S
  • ,
  • Lior Shiv, Capres A/S
  • ,
  • Thomas A. Marangoni, Danmarks Tekniske Universitet
  • ,
  • Andreas R. Stilling-Andersen, Danmarks Tekniske Universitet
  • ,
  • Alberto Cagliani, Capres A/S
  • ,
  • Mikkel F. Hansen, Capres A/S
  • ,
  • Peter F. Nielsen, Capres A/S
  • ,
  • Herman Oprins, Interuniversitair Micro-Elektronica Centrum
  • ,
  • Bjorn Vermeersch, Interuniversitair Micro-Elektronica Centrum
  • ,
  • Christoph Adelmann, Interuniversitair Micro-Elektronica Centrum
  • ,
  • Shibesh Dutta, Interuniversitair Micro-Elektronica Centrum
  • ,
  • Kasper A. Borup
  • Besira M. Mihiretie, Hot Disk AB
  • ,
  • Dirch H. Petersen, Danmarks Tekniske Universitet

Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials’ resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices’ critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.

OriginalsprogEngelsk
Artikelnummer094711
TidsskriftReview of Scientific Instruments
Vol/bind92
Nummer9
Antal sider7
ISSN0034-6748
DOI
StatusUdgivet - sep. 2021

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