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Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials’ resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices’ critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.
Originalsprog | Engelsk |
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Artikelnummer | 094711 |
Tidsskrift | Review of Scientific Instruments |
Vol/bind | 92 |
Nummer | 9 |
Antal sider | 7 |
ISSN | 0034-6748 |
DOI | |
Status | Udgivet - sep. 2021 |
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