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Tobias Nyholm Wistisen

Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avisTidsskriftartikelForskningpeer review

Standard

Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. / Wistisen, T. N.; Uggerhoj, U. I.; Wienands, U.; Markiewicz, T. W.; Noble, R. J.; Benson, B. C.; Smith, T.; Bagli, E.; Bandiera, L.; Germogli, G.; Guidi, V.; Mazzolari, A.; Holtzapple, R.; Tucker, S.

I: Physical review accelerators and beams, Bind 19, Nr. 7, 071001, 05.07.2016.

Publikation: Bidrag til tidsskrift/Konferencebidrag i tidsskrift /Bidrag til avisTidsskriftartikelForskningpeer review

Harvard

Wistisen, TN, Uggerhoj, UI, Wienands, U, Markiewicz, TW, Noble, RJ, Benson, BC, Smith, T, Bagli, E, Bandiera, L, Germogli, G, Guidi, V, Mazzolari, A, Holtzapple, R & Tucker, S 2016, 'Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal', Physical review accelerators and beams, bind 19, nr. 7, 071001. https://doi.org/10.1103/PhysRevAccelBeams.19.071001

APA

Wistisen, T. N., Uggerhoj, U. I., Wienands, U., Markiewicz, T. W., Noble, R. J., Benson, B. C., Smith, T., Bagli, E., Bandiera, L., Germogli, G., Guidi, V., Mazzolari, A., Holtzapple, R., & Tucker, S. (2016). Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. Physical review accelerators and beams, 19(7), [071001]. https://doi.org/10.1103/PhysRevAccelBeams.19.071001

CBE

Wistisen TN, Uggerhoj UI, Wienands U, Markiewicz TW, Noble RJ, Benson BC, Smith T, Bagli E, Bandiera L, Germogli G, Guidi V, Mazzolari A, Holtzapple R, Tucker S. 2016. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. Physical review accelerators and beams. 19(7):Article 071001. https://doi.org/10.1103/PhysRevAccelBeams.19.071001

MLA

Vancouver

Wistisen TN, Uggerhoj UI, Wienands U, Markiewicz TW, Noble RJ, Benson BC o.a. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. Physical review accelerators and beams. 2016 jul 5;19(7). 071001. https://doi.org/10.1103/PhysRevAccelBeams.19.071001

Author

Wistisen, T. N. ; Uggerhoj, U. I. ; Wienands, U. ; Markiewicz, T. W. ; Noble, R. J. ; Benson, B. C. ; Smith, T. ; Bagli, E. ; Bandiera, L. ; Germogli, G. ; Guidi, V. ; Mazzolari, A. ; Holtzapple, R. ; Tucker, S. / Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. I: Physical review accelerators and beams. 2016 ; Bind 19, Nr. 7.

Bibtex

@article{a6e54a38efde43e59fade5baf70727fb,
title = "Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal",
abstract = "We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.",
keywords = "CHARGED-PARTICLES, UNDULATOR, RADIATION",
author = "Wistisen, {T. N.} and Uggerhoj, {U. I.} and U. Wienands and Markiewicz, {T. W.} and Noble, {R. J.} and Benson, {B. C.} and T. Smith and E. Bagli and L. Bandiera and G. Germogli and V. Guidi and A. Mazzolari and R. Holtzapple and S. Tucker",
year = "2016",
month = jul,
day = "5",
doi = "10.1103/PhysRevAccelBeams.19.071001",
language = "English",
volume = "19",
journal = "Physical review accelerators and beams",
issn = "2469-9888",
publisher = "AMER PHYSICAL SOC",
number = "7",

}

RIS

TY - JOUR

T1 - Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

AU - Wistisen, T. N.

AU - Uggerhoj, U. I.

AU - Wienands, U.

AU - Markiewicz, T. W.

AU - Noble, R. J.

AU - Benson, B. C.

AU - Smith, T.

AU - Bagli, E.

AU - Bandiera, L.

AU - Germogli, G.

AU - Guidi, V.

AU - Mazzolari, A.

AU - Holtzapple, R.

AU - Tucker, S.

PY - 2016/7/5

Y1 - 2016/7/5

N2 - We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

AB - We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

KW - CHARGED-PARTICLES

KW - UNDULATOR

KW - RADIATION

U2 - 10.1103/PhysRevAccelBeams.19.071001

DO - 10.1103/PhysRevAccelBeams.19.071001

M3 - Journal article

VL - 19

JO - Physical review accelerators and beams

JF - Physical review accelerators and beams

SN - 2469-9888

IS - 7

M1 - 071001

ER -