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Sahar Pakdel

Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2

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  • H. Mine, Aoyama Gakuin Univ, Aoyama Gakuin University, Fac Sci & Engn
  • ,
  • A. Kobayashi, Aoyama Gakuin Univ, Aoyama Gakuin University, Fac Sci & Engn
  • ,
  • T. Nakamura, Univ Tokyo, University of Tokyo, Inst Solid State Phys
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  • T. Inoue, Univ Tokyo, University of Tokyo, Dept Mech Engn, Bunkyo Ku
  • ,
  • S. Pakdel
  • D. Marian, Univ Pisa, University of Pisa, Dipartimento Ingn Informaz
  • ,
  • E. Gonzalez-Marin, Univ Pisa, University of Pisa, Dipartimento Ingn Informaz
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  • S. Maruyama, Univ Tokyo, University of Tokyo, Dept Mech Engn, Bunkyo Ku
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  • S. Katsumoto, Univ Tokyo, University of Tokyo, Inst Solid State Phys
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  • A. Fortunelli, CNR, Consiglio Nazionale delle Ricerche (CNR), IOM
  • ,
  • J. J. Palacios, Univ Autonoma Madrid, Autonomous University of Madrid, Condensed Matter Phys Ctr IFIMAC
  • ,
  • J. Haruyama, Univ Tokyo, University of Tokyo, Inst Solid State Phys

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D T1 materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T' phase embedded into the 2H phase of thin semiconducting molybdenum-disulfide by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T' phases.

OriginalsprogEngelsk
Artikelnummer146803
TidsskriftPhysical Review Letters
Vol/bind123
Nummer14
Antal sider6
ISSN0031-9007
DOI
StatusUdgivet - 2 okt. 2019

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